Abstract:The ability to confine and guide wave makes topological physics a promising platform for large local field enhancement and strong scattering immunity, which enables efficient nonlinear processes. In this research, we employ a mirror-stacking approach to achieve resonance through two distinct frequency localized states (LSs) in one-dimensional topological circuits, introducing a novel method for validating topological states to facilitate harmonic enhancement. Experimental results reveal that the harmonic wave power increases significantly, by two orders of magnitude, when both the fundamental and harmonic waves are in LSs, in contrast to cases where only one wave is localized. The conversion efficiency is 15.7 times that when the fundamental wave is in a localized state and the harmonic is in a transmission mode. This method, leveraging double-resonance in topological LSs, not only advances harmonic generation in topolectrical circuits but also opens up possibilities for innovative applications in the broader field of photonic technology.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to enhance the generation efficiency of high - order harmonics by realizing doubly - resonant localized states (LSs) in one - dimensional topological circuits. Specifically, the researchers use the mirror - stacking method to combine two different frequency - localized states to form a composite system. This method can not only significantly improve the conversion efficiency of the fundamental wave (FW) and high - order harmonics (HWs), but also adjust the frequencies of these localized states without changing other parts of the circuit, thereby achieving a more effective nonlinear process. ### Research Background - **Topological Insulators**: They have an insulating interior but support conducting topological edge states (TESs), and these edge states are highly stable against local perturbations. - **Topological Circuits**: LC circuits are widely used to realize various topological phenomena, such as the bulk - edge correspondence in high - dimensional systems and the transmission characteristics in low - dimensional systems. - **Nonlinear Components**: The introduction of nonlinear components can further study the applications of topological states in new physical systems. ### Research Objectives - **Double Resonance**: Achieve double resonance of two localized states through the mirror - stacking method to enhance harmonic generation. - **High - Order Harmonic Enhancement**: Verify that when the fundamental wave and high - order harmonics are simultaneously in the localized states, the harmonic wave power increases significantly. - **Application Prospects**: Explore the potential applications of this technology in photonics and other fields, such as high - order topological corner states, extended states and skin states in non - Hermitian systems. ### Experimental Results - **Harmonic Wave Power**: The experimental results show that when the fundamental wave and high - order harmonics are simultaneously in the localized states, the harmonic wave power increases by two orders of magnitude and the conversion efficiency is improved by 15.7 times. - **Nonlinear Effect**: By introducing a nonlinear capacitor, the efficiency of harmonic generation at different voltages was studied, and it was found that the efficiency of harmonic generation gradually increases with the increase of voltage. - **Localized State Characteristics**: Through Fourier transform analysis, the localization characteristics of high - order harmonics at specific frequencies were verified. ### Conclusions - **Successful Realization**: The doubly - resonant localized states were successfully realized through the mirror - stacking method, which significantly enhanced the nonlinear conversion efficiency. - **Application Potential**: This finding provides a new perspective for the application of topological states in nonlinear optical and acoustic devices and is expected to promote the development of future information processing technologies. - **Limitations**: This model may have limitations when applied to different fields, such as limitations of material properties and spatial geometric structures. ### Formula Summary - **Voltage Equation**: \[ \frac{1}{(C_a + C_b)\omega^2}\begin{pmatrix} E_{v_a^n}\\ E_{v_b^n} \end{pmatrix}=H_0\begin{pmatrix} v_a^n\\ v_b^n \end{pmatrix} \] where \(H_0 = \begin{pmatrix} \frac{1}{C_a + C_b}&0\\ \frac{C_b}{C_0}e^{-ik}&\frac{C_a}{C_0} \end{pmatrix}\) - **Relationship between Frequency and Eigenvalue**: \[ f=\frac{1}{2\pi}\sqrt{\frac{1 + \epsilon}{C_{\text{sum}}L}} \] - **Localized State Frequency**: \[ f_{\text{LS1}}=\frac{1}{2\pi}\sqrt{\frac{C_{\text{sum}}+C_1}{L}} \] \[ f_{\text{LS2}}=\frac{1}{2\pi}\sqrt{\frac{C_{\text{sum}}-C_1}{L}} \] - **Nonlinear Capacitance**: \[ \beta\approx A + B|V_{\text{bias}}|^2 \] where \(A = 1.75\), \(B = 0.5\)

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