Abstract:Hafnia (HfO2) is a potential candidate for the high-k gate dielectrics in next-generation high-power electronics. Its thermal transport properties, which determine the performance of these related high-power electronics, are critical while rarely investigated. Here, the thermal transport properties of HfO2 in a wide temperature range of 300–2000 K with a phase transition between monoclinic and tetragonal phases at ∼1765 K, are systematically studied based on the temperature-dependent effective potential landscapes with both propagating and coherence thermal transport considered. It is found that the cage-like structure of monoclinic HfO2 results in the avoid crossing in the phonon band structures, which increases the three-phonon scattering largely. Some phonon modes with significant scattering matrix can have relatively larger 3ph and 4ph scattering rates in tetragonal HfO2. Consequently, the thermal conductivity of HfO2 is only 11.95–1.72 W/mK at 300–2000 K. Our results further show that propagating phonon channels dominate the thermal transport in HfO2 and contribute at least 70% to the total thermal conductivity. The rest of the thermal conductivity of HfO2 results from the coherence thermal transport channels, which is caused by the overlap of phonons. Four-phonon scatterings are found to be significant for the thermal transport in tetragonal HfO2, which can result in a thermal conductivity reduction of ∼50%. Our results here advance the understanding of the thermal transport in HfO2, which may benefit the performance optimization of HfO2-related electronics.

What problem does this paper attempt to address?

The problem this paper attempts to address is the thermal transport properties of hafnium oxide (HfO₂) at different temperatures, particularly during the phase transition between monoclinic and tetragonal phases, and the impact of higher-order scattering and phonon coherence on thermal conductivity. Specifically, the study aims to systematically investigate the thermal conductivity of hafnium oxide in the temperature range of 300 to 2000 K and analyze how these properties are affected by higher-order scattering (such as three-phonon and four-phonon scattering) and phonon coherence. ### Background of the Paper Hafnium oxide (HfO₂) has significant potential applications in next-generation high-power electronic devices due to its excellent dielectric properties. However, its thermal transport properties are crucial for the performance of these electronic devices and have not been fully studied. This paper systematically investigates the thermal transport properties of hafnium oxide in the temperature range of 300 to 2000 K by considering both propagative and coherent thermal transport, based on a temperature-dependent effective potential landscape. ### Main Research Content 1. **Temperature Dependence of Thermal Conductivity**: - The thermal conductivity of hafnium oxide in the temperature range of 300 to 2000 K was studied, particularly the changes during the phase transition from monoclinic to tetragonal phase. - It was found that the cage-like structure of monoclinic hafnium oxide leads to avoided crossings in the phonon band structure, increasing three-phonon scattering. 2. **Impact of Higher-Order Scattering**: - The effects of three-phonon and four-phonon scattering on thermal conductivity were analyzed. It was found that four-phonon scattering is significant in tetragonal hafnium oxide, which can reduce thermal conductivity by about 50%. - In monoclinic hafnium oxide, three-phonon scattering is dominant, while in tetragonal hafnium oxide, four-phonon scattering becomes important. 3. **Role of Phonon Coherence**: - The contribution of phonon coherence to thermal transport was explored. It was found that phonon coherence becomes important at high temperatures, especially at 2000 K, where it can contribute up to 29.71% of thermal energy transport. ### Conclusion The results of this study deepen the understanding of the thermal transport properties of hafnium oxide and help optimize the performance of related electronic devices. The main conclusions include: - The propagative phonon channel is the main channel for thermal transport in hafnium oxide, contributing at least 70% of the total thermal conductivity. - Phonon coherence becomes important at high temperatures, especially at 2000 K, contributing up to 29.71%. - Four-phonon scattering is significant in tetragonal hafnium oxide, which can reduce thermal conductivity by about 50%. These findings provide an important theoretical basis for the design and optimization of hafnium oxide-based electronic devices.

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