Abstract:Continuing advances in scaling of conventional semiconductor devices are enabling mainstream electronics to operate in the millimeter-wave through THz regime. At the same time, however, novel devices and device concepts are also emerging to address the key challenges for systems in this frequency range, and may offer performance and functional advantages for future systems. In addition to new devices, advances in integration technology and novel system concepts also promise to provide substantial system-level performance and functionality enhancements. Several emerging devices and device concepts, as well as circuit-level concepts to take advantage of them, are discussed. Based on unconventional semiconductor device structures and operational principles, these devices offer the potential for significantly improved system sensitivity and frequency coverage. When combined in arrays, features such as polarimetric detection and frequency tunability for imaging can be achieved. As examples of emerging devices for millimeter-wave through THz sensing and imaging, heterostructure backward diodes in the InAs/AlSb/GaSb material system and GaN-based plasma-wave high electron mobility transistors (HEMTs) will be discussed. Based on interband tunneling, heterostructure backward diodes offer significantly increased sensitivity and extremely low noise for direct detection applications, and have been demonstrated with cutoff frequencies exceeding 8 THz. The plasma-wave HEMT is an emerging device concept that, by leveraging plasma-wave resonances in the two-dimensional electron gas within the channel of the HEMT, offers the prospect for both tunable narrowband detection as well as low-noise amplification at frequencies well into the THz. These emerging devices are both amenable to direct integration within compact planar radiating structures such as annular slot antennas for realization of polarimetric detection and frequency tuning for spectroscopy and imaging.

Continuous wave terahertz detection using 1550 nm pumped nonlinear photoconductive GaAs metasurfaces

Efficient photoconductive terahertz detector with all-dielectric optical metasurface

Continuous-wave Terahertz System with 50 Db Dynamic Range at 1 THz Using a N-I-pn-i-p Superlattice Photomixer and an ErAs:InGaAs Photoconductor Operated at 1550 Nm

Continuous-wave 1550 Nm Operated Terahertz System Using ErAs:In(Al)GaAs Photo-Conductors with 52 Db Dynamic Range at 1 THz

Plasmon-Enhanced below Bandgap Photoconductive Terahertz Generation and Detection

Continuous-wave coherent imaging with terahertz quantum cascade lasers using electro-optic harmonic sampling

Single GaAs/AlGaAs Nanowire Photoconductive Terahertz Detectors

Continuous-Wave Sub-THz Photonic Generation with Ultra-Narrow Linewidth, Ultra-High Resolution, Full Frequency Range Coverage and High Long-Term Frequency Stability

Continuous-Wave Thz Imaging System Using Microwave Photonic Double Sideband Modulation

Efficient and Continuous Carrier-Envelope Phase Control for Terahertz Lightwave-Driven Scanning Probe Microscopy

Pulsed Thz Time Domain System with Eras: In(Al) Gaas Photoconductors

Transient GaAs Plasmonic Metasurfaces at Terahertz Frequencies

Sub-zeptojoule detection of terahertz pulses by parametric frequency upconversion

Optically Controlled Ultrafast Terahertz Metadevices with Ultralow Pump Threshold (Small 44/2021)

Self-Induced Phase Locking of Terahertz Frequency Combs in a Phase-Sensitive Hyperspectral Near-Field Nanoscope

Nonperturbative Nonlinear Metasurfaces for Efficient Terahertz Harmonic Generation

High-Resolution and Wide-Span Terahertz Frequency Measurement Using Nonlinear Up-Conversion

Near-field terahertz probes with room-temperature nanodetectors for subwavelength resolution imaging

Ultrafast terahertz detectors based on three-dimensional meta-atoms

High Resolution Terahertz imaging

Emerging Electronic Devices for Thz Sensing and Imaging