Abstract:External-field-triggered multiple electronic phase transitions within correlated oxides open up a new paradigm to explore exotic physical functionalities and new quantum transitions via regulating the electron correlations and the interplay in the degrees of freedom. This enables the promising applications in the multidisciplinary field of neuromorphic computing, magnetoelectric coupling, smart windows, bio-sensing and energy conversion. Herein, this review delivers a comprehensive picture of regulating the electronic phase transitions for correlated oxides via multi-field covering the VO 2 , ReNiO 3 and etc., thus highlighting the critical role of external field in exploring the exotic physical property and designing new quantum states. Beyond conventional semiconductors, the complicated interplay in the charge, lattice, orbital and spin degrees of freedom within correlated oxides triggers abundant correlated physical functionalities that are rather susceptible to the external field. For example, hydrogen-associated electron doping Mottronics enables the possibility in discovering new electronic phase and magnetic ground states within the hydrogen-related phase diagram of correlated oxides. In addition, filling-controlled Mottronics by using hydrogenation triggers multiple orbital reconfigurations for correlated oxides away from the correlated electron ground state that results in new quantum transitions via directly manipulating the d -orbital configuration and occupation, such as unconventional Ni-based superconductivity. The transition metals of correlated oxides are generally substituted by dopants to effectively adjust the electronic phase transitions via introducing the carrier doping and/or lattice strain. Imparting an interfacial strain to correlated oxides introduces an additional freedom to manipulate the electronic phase transition via distorting the lattice framework, owing to the interplay between charge and lattice degrees of freedom. In recent years, the polarization field associated to BiFeO 3 or PMN-PT material as triggered by a cross-plane electric field was used to adjust the electronic phase transition of correlated oxides that enriches the promising the correlated electronic devices. The exotic physical phenomenon as discovered in the correlated oxides originates from the non-equilibrium states that are triggered by imparting external fields. Nevertheless, the underneath mechanism as associated to the regulation in the electronic phase transitions of correlated oxides is still in a long-standing puzzle, owing to the strong correlation effect. As a representative case, hydrogen-associated Mottronic transitions introduces an additional ion degree of freedom to the correlated oxides that is rather difficult to be decoupled within correlated system. In addition, from the perspective of material synthesis, the abovementioned correlated oxides are expected to be compatible to conventional semiconducting process, by which the prototypical correlated electronic devices can be largely developed. The key point that accurately adjusts and designs the electronic phase transitions for correlated oxides via external fields is associated to clarify the basic relationship between the microscopic degrees of freedom and macroscopic correlated physical properties. On the basis, the multiple electronic phase transitions as triggered by external field within correlated oxides provide new guidance for designing new functionality and interdisciplinary device applications.

Spatial evolution of the proton-coupled Mott transition in correlated oxides for neuromorphic computing

Energy-Efficient, Stable and Temperature-Tolerant Neuromorphic Device Based on Single Crystals of Halide Perovskites

Artificial Synapse Network on Inorganic Proton Conductor for Neuromorphic Systems Applications

Proton-Doped Strongly Correlated Perovskite Nickelate Memory Devices

Ionic Modulation and Ionic Coupling Effects in MoS2 Devices for Neuromorphic Computing

Oxide-Based Synaptic Transistors for Neuromorphic Systems

Understanding Atomic-Scale Dynamics of Defects in Complex Oxides for Memristive Devices

Bipolar to Unipolar Mode Transition and Imitation of Metaplasticity in Oxide Based Memristors with Enhanced Ionic Conductivity

Memory And Learning Behaviors Mimicked In Nanogranular Sio2-Based Proton Conductor Gated Oxide-Based Synaptic Transistors

Learning and Spatiotemporally Correlated Functions Mimicked in Oxide-Based Artificial Synaptic Transistors

Proton Conducting Neuromorphic Materials and Devices

Gate‐Tunable Anisotropic Oxygen Ion Migration in SrCoOx: Toward Emerging Oxide‐Based Artificial Synapses

Heterosynaptic Plasticity Achieved by Highly Anisotropic Ionic Migration in Layered LixMoO3 for Neuromorphic Application

0D/1D organic ferroelectrics/multiferroics for ultrahigh density integration: Helical hydrogen-bonded chains, multi-mode switching, and proton synaptic transistors

Photonic Potentiation and Electric Habituation in Ultrathin Memristive Synapses Based on Monolayer MoS2

Electron-Doping Mottronics in Strongly Correlated Perovskite.

Research on the regulation of electronic phase transitions for correlated oxides by using multiple fields

A Synaptic Transistor Based on Quasi-2d Molybdenum Oxide

Metallopolymeric Memristor Based Artificial Optoelectronic Synapse for Neuromorphic Computing

Low dimensional materials and devices for neuromorphic computing

Optoelectronic Synapses Based on Triple Cation Perovskite and Al/MoO3 interface for Neuromorphic Information Processing