Single-Transistor Impedance Matching Circuit for Over-Hundred-Octave Active Antennas

Shuyu Wang,Yue Li
DOI: https://doi.org/10.1109/tap.2024.3351203
IF: 5.7
2024-03-09
IEEE Transactions on Antennas and Propagation
Abstract:In this article, a novel active impedance matching circuit with a single transistor is studied for antennas to cover over a hundred-octave bandwidth. In the proposed matching circuit, only one field effect transistor (FET) is utilized and biased in the ohmic region. The FET is integrated with a dipole antenna at the gate, and connected with a transmission line at the drain. With small dimensions, this active antenna performs as a receiver with a wide impedance bandwidth of 10 MHz–1.9 GHz, in which the reflection coefficient is lower than −10 dB, covering 190 octave bandwidth. An equivalent circuit model of the ohmic-biased FET is built to analyze this unusual wideband performance, which exhibits promising applications in ultrawideband (UWB) electromagnetic sensing systems with extremely restricted volume.
telecommunications,engineering, electrical & electronic
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