Abstract:Semiconductor heterostructures are suitable for the design and fabrication of terahertz (THz) plasmonic devices, due to their matching carrier densities. The classical dispersion relations in the current literature are derived for metal plasmonic materials, such as gold and silver, for which a homogeneous dielectric function is valid. Penetration of the electric fields into semiconductors induces locally varying charge densities and a spatially varying dielectric function is expected. While such an occurrence renders tunable THz plasmonics a possibility, it is crucial to understand the conditions under which propagating resonant conditions for the carriers occur, upon incidence of an electromagnetic radiation. In this manuscript, we derive a dispersion relation for a p-n heterojunction and apply the methodology to a GaAs p-n junction, a material of interest for optoelectronic devices. Considering symmetrically doped p- and n-type regions with equal width, the effect of certain parameters (such as doping and voltage bias) on the dispersion curve of the p-n heterojunction were investigated. Keeping in sight the different effective masses and mobilities of the carriers, we were able to obtain the conditions that yield identical dielectric functions for the p- and n-regions. Our results indicated that the p-n GaAs system can sustain propagating resonances and can be used as a layered plasmonic waveguide. The conditions under which this is feasible fall in the frequency region between the transverse optical phonon resonance of GaAs and the traditional cut-off frequency of the diode waveguide. In addition, our results indicated when the excitation was slightly above the phonon resonance frequency, the plasmon propagation attained low-loss characteristics. We also showed that the existence or nonexistence of the depletion zone between the p- and n- interfaces allowed certain plasmon modes to propagate, while others decayed rapidly, pointing out the possibility for a design of selective filters.

Electrostatic THz Excitation in Semiconductor Plasmas

Simulation of High Power Thz Emission from Laser Interaction with Tenuous Plasma and Gas Targets

Semiconductor Characterization By Terahertz Excitation Spectroscopy

Novel Thz Radiation From Relativistic Laser-Plasmas

Phase-sensitive Terahertz Plasma Emission from Gas Targets Irradiated by Few -cycle Intense Laser Pulses

Powerful Terahertz Emission from Relativistic Laser Plasma Interaction and Its Potential Applications

A Theoretical Treatment of THz Resonances in Semiconductor GaAs p-n Junctions

Surface plasmon-polariton resonance at diffraction of THz radiation on semiconductor gratings

Narrowband THz Emission from a Plasma Oscillator Imbedded in a Plasma Density Gradient

Radially polarized femtosecond laser interaction with unmagnetized plasma slab and symmetric modes for enhanced terahertz field generation

THz transition radiation of electron bunches laser-accelerated in long-scale near-critical-density plasmas

Excitation, detection and electrostatic manipulation of terahertz-frequency range plasmons in a two-dimensional electron system

Mechanisms of THz Radiation in Laser-Plasma Interactions

Terahertz Radiation from a Plasma Cylinder with External Radial Electric and Axial Magnetic Fields

Coherent and Tunable Terahertz Radiation from Graphene Surface Plasmon Polarirons Excited by Cyclotron Electron Beam.

A fully coupled system of generalized thermoelastic theory for semiconductor medium

THz transition radiation of electron bunch laser-accelerated in long-scale near-critical density plasmas

Broadband terahertz near-field excitation and detection of silicon photonic crystal modes

Hyperbolic thermal-plasma wave propagation in semiconductor of organic material

Analytical solutions of photothermal wave in semiconductor materials

Spintronics phenomena induced by THz radiation in narrow-gap HgCdTe thin films in an external constant electric field