Constructing type-II CuInSe2/CuInS2 core/shell quantum dots for high-performance photoelectrochemical cells

Zheng Huang,Jie Meng,Fei Huang,Binbin Yu,Junfeng Wang,Yumin Yang,Jiajia Ning,Kaibo Zheng,Jianjun Tian
DOI: https://doi.org/10.1007/s40843-023-2690-3
2024-01-03
Science China Materials
Abstract:CuInSe 2 (CISe) quantum dots (QDs) have shown promising applications in photoelectrochemical (PEC) cells due to their nontoxicity, high extinction coefficient, and wide optical absorption range; however, their low PEC performance prevents their applications due to insufficient charge carrier separation and severe charge recombination. Herein, CISe/CuInS 2 (CISe/CIS) core/shell structured QDs are designed and constructed to promote charge separation and diminish interface defects. Afterward, the copper vacancy (V Cu ) state of CISe/CIS QDs is enriched by modulating the precursor molar ratios of In/Cu. Therefore, the radiative recombination of the conduction band edge electrons with the V Cu localized holes becomes dominant and prolongs the carrier lifetime compared with intrinsic band-to-band recombination, thus promoting charge separation. Consequently, the V Cu -rich CISe/CIS QD-based photoanode shows a high photocurrent density of 8.0 mA cm −2 , which is one of the highest values reported for CISe QD-based PEC cells. This work provides an effective approach for promoting charge carrier separation and transfer through surface or intrinsic defect mediation for PEC applications of I–III–VI semiconductor nanocrystals.
materials science, multidisciplinary
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