Highly efficient near-infrared thermally activated delayed fluorescence material based on a spirobifluorene decorated donor

Jing-Feng Liu,Xue-Qi Wang,You-Jun Yu,Sheng-Nan Zou,Sheng-Yi Yang,Zuo-Quan Jiang,Liang-Sheng Liao
DOI: https://doi.org/10.1016/j.orgel.2021.106088
IF: 3.868
2021-04-01
Organic Electronics
Abstract:<p>The development of red/near-infrared (NIR) thermally activated delayed fluorescence (TADF) emitters are relatively lagging due to the spin statistics and energy gap law. Herein, we designed and synthesized a new NIR TADF emitter, 3-(4-(9,9′-spirobi[fluorene]-3-yl(phenyl)amino)phenyl)acenaphtho[1,2-b]pyrazine-8,9-dicarboni-trile <strong>(SDPA-APDC)</strong>, by incorporating a spiro-type electron-donating moiety <em>N</em>,<em>N</em>-diphenyl-9,9′-spirobi[fluorene]-2-amine (SDPA) to an electron-withdrawing unit acenaphtho[1,2-<em>b</em>]pyrazine-8,9-dicarbonitrile (APDC). The photophysical, electrochemical and thermal properties of <strong>SDPA-APDC</strong> have been systematically explored. Consequently, the emitter was found high photoluminescence quantum yield (PLQY), narrow bandgap, small singlet-triplet energy gap (Δ<em>E</em><sub>ST</sub>) and excellent thermal stability. Furthermore, <strong>SDPA-APDC</strong> was developed for electroluminescence devices. The doped devices of <strong>SDPA-APDC</strong> achieved a red emission peak at 696 nm with a maximum external quantum efficiency (EQE) of 10.75%. And the non-doped device exhibited a NIR emission peak at 782 nm with a maximum EQE of 2.55%</p>
materials science, multidisciplinary,physics, applied
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