Contact Engineering of III-Nitrides and Metal Schemes toward Efficient Deep-Ultraviolet Light-Emitting Diodes

Xiaoyu Zhao,Ke Sun,Zhenxing Lv,Zhefu Liao,Sheng Liu,Shengjun Zhou

DOI: https://doi.org/10.1021/acsami.3c15303

IF: 9.5

2024-01-25

ACS Applied Materials & Interfaces

Abstract:Throughout the development of III-nitride electronic and optoelectronic devices, electrically interfacing III-nitride semiconductors and metal schemes has been a long-standing issue that determines the contact resistance and operation voltage, which are tightly associated with the device performance and stability. Compared to the main research focus of the crystal quality of III-nitride semiconductors, the equally important contact interface between III-nitrides and metal schemes has received...

materials science, multidisciplinary,nanoscience & nanotechnology