Dual-metal precursors for the universal growth of non-layered 2D transition metal chalcogenides with ordered cation vacancies

Junyang Tan,Zongteng Zhang,Shengfeng Zeng,Shengnan Li,Jingwei Wang,Rongxu Zheng,Fuchen Hou,Yinping Wei,Yujie Sun,Rongjie Zhang,Shilong Zhao,Huiyu Nong,Wenjun Chen,Lin Gan,Xiaolong Zou,Yue Zhao,Junhao Lin,Bilu Liu,Hui-Ming Cheng
DOI: https://doi.org/10.1016/j.scib.2022.06.022
IF: 18.9
2022-08-31
Science Bulletin
Abstract:Two-dimensional (2D) transition metal chalcogenides (TMCs) are promising for nanoelectronics and energy applications. Among them, the emerging non-layered TMCs are unique due to their unsaturated dangling bonds on the surface and strong intralayer and interlayer bonding. However, the synthesis of non-layered 2D TMCs is challenging and this has made it difficult to study their structures and properties at thin thickness limit. Here, we develop a universal dual-metal precursors method to grow non-layered TMCs in which a mixture of a metal and its chloride serves as the metal source. Taking hexagonal Fe1–xS as an example, the thickness of the Fe1–xS flakes is down to 3 nm with a lateral size of over 100 μm. Importantly, we find ordered cation Fe vacancies in Fe1–xS, which is distinct from layered TMCs like MoS2 where anion vacancies are commonly observed. Low-temperature transport measurements and theoretical calculations show that 2D Fe1–xS is a stable semiconductor with a narrow bandgap of ∼60 meV. In addition to Fe1–xS, the method is universal in growing various non-layered 2D TMCs containing ordered cation vacancies, including Fe1–xSe, Co1–xS, Cr1–xS, and V1–xS. This work paves the way to grow and exploit properties of non-layered materials at 2D thickness limit.
multidisciplinary sciences
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