Abstract:Electrostatic doping in materials can lead to various exciting electronic properties, such as metal–insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional (3D) analog of graphene with extraordinary carrier mobility, was predicted to be a 3D Dirac semimetal, a feature confirmed by recent experiments. However, most research so far has been focused on metallic bulk materials that are known to possess ultra-high mobility and giant magneto-resistance but limited carrier transport tunability. Here we report on the first observation of a gate-induced transition from band conduction to hopping conduction in single-crystalline Cd3As2 thin films via electrostatic doping by solid electrolyte gating. The extreme charge doping enables the unexpected observation of p-type conductivity in a ∼50-nm-thick Cd3As2 thin film grown by molecular beam epitaxy. More importantly, the gate-tunable Shubnikov–de Haas oscillations and the temperature-dependent resistance reveal a unique band structure and bandgap opening when the dimensionality of Cd3As2 is reduced. This is also confirmed by our first-principle calculations. The present results offer new insights toward nanoelectronic and optoelectronic applications of Dirac semimetals in general and provide new routes in the search for the intriguing quantum spin Hall effect in low-dimension Dirac semimetals, an effect that is theoretically predicted but not yet experimentally realized. The tunable quantum transport capabilities of cadmium arsenide thin films may unlock new applications for graphene-like semiconductors. Cadmium arsenide has similar electronic properties to graphene, but is easier to work with thanks to its three-dimensional crystal structure. Faxian Xiu of Fudan University in Shanghai and co-workers have now mapped out this material's band structure in confined 50-nanometre-thin film structures. By using a source-drain layout with an unconventional gate electrode — a droplet of ionic electrolyte that electrostatically dopes cadmium arsenide and changes its Fermi level — they saw remarkable conductivity switching behaviour, which is useful for ambipolar field effect transistors. Applying magnetic fields during device operation also revealed the possibility of generating quantum spin Hall effects — the team observed intriguing quantum oscillation conductivity when the Fermi level was pushed into the high-mobility conduction band. Cd3As2, which is known as a topological Dirac semimetal, has been grown on mica substrates by molecular beam epitaxy with high mobility. The temperature-dependent resistance of as-grown Cd3As2 thin films showed semiconducting behavior, indicating the band gap opening as opposed to the bulk counterpart. By solid electrolyte gating, the ambipolar effect and gate-tunable quantum oscillations were clearly demonstrated. These features make the Cd3As2 thin film system a promising platform to observe various exotic phenomena and realize new electronic applications.

Room-Temperature Manipulation of Spin Texture in a Dirac Semimetal

Nonreciprocal nonlocal spin transport observed in Dirac semimetal Cd3As2 nanoplates

Spin and charge interconversion in Dirac semimetal thin films

Electric Control of Fermi Arc Spin Transport in Individual Topological Semimetal Nanowires

Rashba spin splitting-induced topological Hall effect in a Dirac semimetal-ferromagnetic semiconductor heterostructure

Bilinear Magnetoelectric Resistance As a Probe of Three-Dimensional Spin Texture in Topological Surface States

Nonreciprocal nonlocal spin transport observed in Dirac semimetal <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Cd</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mi>As</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math> nanoplates

Room-temperature Chiral Charge Pumping in Dirac Semimetals

Electrically controlled spin polarized current in Dirac semimetals

Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3as2 Nanoplates

Surface Engineering of Antisymmetric Linear Magnetoresistance and Spin-Polarized Surface State Transport in Dirac Semimetals

Room Temperature Gate Tunable Non Reciprocal Charge Transport in Lattice Matched InSb/CdTe Heterostructures

Cr Doping Induced Negative Transverse Magnetoresistance in Cd3As2 Thin Films

Room-Temperature Gate-Tunable Nonreciprocal Charge Transport in Lattice-Matched InSb/CdTe Heterostructures

Gate-tunable Quantum Oscillations in Ambipolar Cd3As2 Thin Films

Tunable spin–charge conversion in class-I topological Dirac semimetals

Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures

Topological Spin Textures in a Non‐Collinear Antiferromagnet System

Room-temperature spin-orbit torque in NiMnSb

Proximity Band Structure and Spin Textures on Both Sides of Topological-Insulator/Ferromagnetic-Metal Interface and Their Charge Transport Probes.

Gate Modulation of Anisotropic Superconductivity in Al–Dirac Semimetal Cd3As2 Nanoplate–al Josephson Junctions