Abstract:The low-intensity photoionization of individual semiconductor nanocrystals, at 23 degreesC in dry nitrogen, is time-resolved over many hours for both S (532-nm excitation) and P (395-nm excitation) nanocrystal excited states using electrostatic force microscopy. Over 7000 calibrated charge measurements have been made on 14- and 21-Angstrom-thick oxide layers. Photoexcited electrons tunnel across the oxide into the silicon, and multiple charges can build up on individual nanocrystals at intensities of only 0.1-0.01 W/cm(2). The silicon dopant type influences the net nanocrystal charging via the interfacial band bending; P-type subtrates show a faster nanocrystal reneutralization rate due to their higher interfacial electron concentration. There is a huge range of photoionzation behavior for individual nanocrystals. This behavior is different for 395- and 532-nm excitation in the same nanocrystal. This individuality seems in part to reflect tunneling through spatially localized defect states in the oxide. The line widths of spatial charge images of individual nanocrystals and the semicontinuous rate of charge re-neutralization after excitation suggest that we observe trapped electron motion in the adjacent oxide and/or on the nanocrystal surface, in addition to the ionized nanocrystal. On average, tunneling of the excited P electron is faster by 1-2 orders of magnitude than that of the S electron; the data show direct photoionization from the excited P state. A kinetic model is developed, including the effect of charging energy on tunneling rate, and applied to ensemble average behavior. There is no quantitative agreement of the tunneling-rate dependence on oxide thickness and excitation energy with the simple I D effective mass tunneling model. However, overall observed trends are rationalized in light of current thin-oxide tunneling literature.

Ligand Desorption and Fragmentation in Oleate-Capped CdSe Nanocrystals under High-Intensity Photoexcitation

Thermal Activation of Non-Radiative Auger Recombination in Charged Colloidal Nanocrystals

Plasmon-Enhanced Surface-State Emission of CdSe Quantum Dots and Its Application to Microscale Luminescence Patterns

Optical Properties of Fully Inorganic, Spacer-Free Core/Gradient-Shell CdSe/CdZnS Nanocrystals at the Ensemble and Single-Nanocrystal Levels

Silver Nanoshell Plasmonically Controlled Emission of Semiconductor Quantum Dots in the Strong Coupling Regime

Extended Storage of Multiple Excitons in Trap States of Semiconductor Nanocrystals

Enhanced Multiple Exciton Dissociation from CdSe Quantum Rods: the Effect of Nanocrystal Shape.

Ultrafast electronic structures and dynamics of CdSe nanocrystals revealed by gas phase time-resolved photoelectron spectroscopy

Surface passivation and enhanced quantum-size effect and photo stability of coated CdSe/CdS nanocrystals

Continuous Synthesis of Cdsexte1-X Nanocrystals: Chemical Composition Gradient and Single-Step Capping

Adsorption and Photoreactivity of CdSe Nanoparticles at Liquid|liquid Interfaces

Characterization of CdSe and CdSe/CdS Core/shell Nanoclusters Synthesized in Aqueous Solution

Water Effects on Colloidal Semiconductor Nanocrystals: Correlation of Photophysics and Photochemistry

Effects of Post-Synthesis Processing on CdSe Nanocrystals and Their Solids: Correlation between Surface Chemistry and Optoelectronic Properties

Enhanced photocurrent in solution processed electronically coupled CdSe nanocrystals thin films

Photoionization of Individual CdSe/CdS Core/Shell Nanocrystals on Silicon with 2-nm Oxide Depends on Surface Band Bending

Photogenerated Excitons in Plain Core CdSe Nanocrystals with Unity Radiative Decay in Single Channel: the Effects of Surface and Ligands.

Weakly Confined Semiconductor Nanocrystals Excel in Photochemical and Optoelectronic Properties: Evidence from Single-Dot Studies

Liquid lasing from solutions of ligand-engineered semiconductor nanocrystals

Imaging the Photoionization of Individual CdSe/CdS Core−Shell Nanocrystals on N- and P-Type Silicon Substrates with Thin Oxides

Suppressed Magnitude of Spectral Diffusion in Cube-Shaped CdSe/CdS Core/Shell Nanocrystals with Exceedingly Stable Photoluminescence.