Abstract:Insulated gate bipolar transistor (IGBT) junction temperature monitoring is crucial for converter's healthy management and condition monitoring. However, most conventional IGBT junction temperature estimation methods are device-level, which means that monitoring junction temperatures of all IGBTs in converters require the same number of monitoring units as IGBTs, which is of high complexity and cost. A converter-level IGBT junction temperature estimation method based on the dc bus voltage ringing is proposed in this article. The peak values of the bus voltage ringing during switching transient display a linear dependence on the junction temperatures of the corresponding switching IGBTs. Hence, the bus voltage ringing can be used for estimating the junction temperatures of the IGBTs in a converter. The validity of the proposed method is verified by experiments on a double-pulse and three-phase converter. Besides, implementation schemes and calibration approaches for practical applications are discussed. The proposed method has a higher resolution as compared with a traditional on-state voltage-based IGBT junction temperature monitoring method. Besides, the proposed method reduces the circuit complexity, size, and cost, and it is easy to install. Moreover, the proposed method has a fast response and high resolution, and it does not disturb the normal operation. The proposed method is independent of bond wire degradation of the IGBT module.

Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTs

A Novel Method For On-Line Junction Temperature Measurement Of Power Modules

Thermal-Fluid Co-Simulation and Modelling of IGBT with Thermal Resistance Network

Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors

A Novel On-line IGBT Junction Temperature Measurement Method Based on On-state Voltage Drop

Igbt Junction Temperature Measurement Via Combined Tseps with Collector Current Impact Elimination

A Thermo-Sensitive Electrical Parameter with Maximum Di(C)/Dt During Turn-Off for High Power Trench/Field-Stop Igbt Modules

A Novel In Situ Igbt And Fwd Junction Temperature Estimation Technique For Igbt Module Based On On-State Voltage Drop Measurement

A Novel Temperature Sensitive Electrical Parameter of IGBT Modules Without Involvement of Operating Parameters

Junction temperature measurement method for IGBTs using turn-on miller plateau duration

LF-OCT Based Non Destructive Testing for IGBT Module

An Online Bridge-Level IGBT Temperature Estimation Approach Via Emitter Parasitic Inductance Voltage Undershoot

A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor

The Injection Efficiency Controlled IGBT

A Junction Temperature Monitoring Method for IGBT Modules Based on Turn-Off Voltage with Convolutional Neural Networks

Dynamic junction temperature estimation via built-in negative thermal coefficient (NTC) thermistor in high power IGBT modules

A Novel Converter-Level IGBT Junction Temperature Estimation Method Based on the Bus Voltage Ringing

A Novel IGBT Junction Temperature Detection Based on High-Frequency Model of Inductor Element

In Situ Insulated Gate Bipolar Transistor Junction Temperature Estimation Method Via a Bond Wire Degradation Independent Parameter Turn-OFF V Ce Overshoot

Non-Contact Degradation Evaluation for IGBT Modules Using Eddy Current Pulsed Thermography Approach

A Novel Over-Temperature Protection Technique Based on Leakage Current for IGBT Modules