Enhancing energy storage properties of Bi4Ti3O12-based dielectric ceramics via doping BaSnO3
Yunkai Zhao,Kai Wang,Lingru Meng,Yunong Liao,Weiqi Zhang,Zhijun Xu,Jinyi Wu,Ruiqing Chu
DOI: https://doi.org/10.1007/s10854-024-13684-0
2024-10-29
Journal of Materials Science Materials in Electronics
Abstract:In this work, (1 − x ) Bi 2.8 La 1.2 Ti 3 O 12− x BaSnO 3 ( x = 0.04–0.07, denoted as (1 − x )BLT– x BSN) ceramics were prepared using traditional solid-phase sintering technology at 1150 °C for 2 h. The introduction of BSN into BLT ceramics not only refines the grain, but also increases the Curie temperature ( T c ), in addition to enhancing the dielectric temperature stability. In 0.95BLT–0.05BSN lead-free ceramics, the breakdown field strength reaches 210 kV/cm, and a recoverable energy storage density ( W rec ) of 0.73 J/cm 3 and an energy storage efficiency ( η ) of 86.7% are obtained. Furthermore, the 0.95 BLT–0.05 BSN ceramics showed good fatigue properties, with a 3.8% W rec change over 10 6 cycles at 20 °C, and, in particular, only a 3.6% W rec change over 10 6 cycles at 50 °C, demonstrating insensitivity to temperature changes. In addition, the reduction in ferroelectric polarization is attributed to the significant orbital hybridization between Bi/Ti and O atoms, along with the disorder in A/B site ionic displacements, as inferred from first-principles calculations.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied