Abstract:Abstract Ultrafast carrier relaxation in the 2D topological insulator (TI) Bi 2 Se 3 [gapped Dirac surface states (SS)] and how it inherits ultrafast relaxation in the 3D TI Bi 2 Se 3 (gapless Dirac SS) remains a challenge for developing new optoelectronic devices based on these materials. Here ultrashort (~ 100 fs) pumping pulses of ~ 340 nm wavelength (~ 3.65 eV photon energy) were applied to study ultrafast electron relaxation in the 2D TI Bi 2 Se 3 films with a thickness of 2 and 5 quintuple layers (~ 2 and ~ 5 nm, respectively) using transient absorption (TA) spectroscopy in the ultraviolet–visible spectral region (1.65–3.9 eV). The negative and positive contributions of TA spectra were attributed to absorption bleaching that mostly occurs in the bulk states and to the inverse bremsstrahlung type free carrier absorption in the gapped Dirac SS, respectively. Owing to this direct and selective access to the bulk and surface carrier dynamics, we were able to monitor coherent longitudinal optical (LO) phonon oscillations, which were successively launched in the bulk and surface states by the front of the relaxing electron population within the LO-phonon cascade emission. We have also recognized the coherent surface-to-bulk vibrational coupling that appears through the phase-dependent amplitude variations of coherent LO-phonon oscillations. This unique behavior manifests itself predominantly for the topologically trivial insulator phase of the 2D TI Bi 2 Se 3 (2 nm thick film) in the photon energy range (~ 2.0–2.25 eV) where efficient energy exchange between the bulk and surface states occurs. We also found that the coherent surface-to-bulk vibrational coupling significantly weakens with increasing both the Bi 2 Se 3 film thickness and pumping power.

Electron- versus Spin-Phonon Coupling Governs the Temperature-Dependent Carrier Dynamics in the Topological Insulator Bi 2 Te 3

Thickness-dependent Carrier and Phonon Dynamics of Topological Insulator Bi2Te3 Thin Films.

Electron-Phonon Coupling on the Surface of Topological Insulators

Enhanced Electron Dephasing in Three-Dimensional Topological Insulators

Coherent surface-to-bulk vibrational coupling in the 2D topologically trivial insulator Bi2Se3 monitored by ultrafast transient absorption spectroscopy

Measurement of Intrinsic Dirac Fermion Cooling on the Surface of the Topological InsulatorBi2Se3Using Time-Resolved and Angle-Resolved Photoemission Spectroscopy

Ultrafast dynamics of Dirac surface and bulk photocarriers in topological-insulator bismuth telluride nanocrystals using terahertz spectroscopy

Dirac semimetal PdTe 2 temperature-dependent quasiparticle dynamics and electron–phonon coupling

Hot-carrier transport and spin relaxation on the surface of topological insulator

Electron-phonon interactions at the topological edge states in single bilayer Bi(111)

Phonon softening near topological phase transitions

Anomalous Phonon Softening in the Topological Insulator Sn-doped Bi 1.1 Sb 0.9 Te 2 S

Tunable Dirac Fermion Dynamics in Topological Insulators

Temperature-Dependent Spin-to-Charge Conversion and Efficient Manipulation of Elliptical THz Waves in Bi 2 Te 3 /TbFeCo Heterostructures

La Phonons Scattering of Surface Electrons in Bi2se3

Topological surface state enhanced ultrafast spin dynamics of Fe / Bi 2 Se 3 heterostructures

Quasiparticle dispersion and dynamics temperature evolution in semimetallic 1T-TiTe2

Phonon transport manipulation in TiSe 2 via reversible charge density wave melting

Complex Band Structures and Lattice Dynamics of Bi2Te3‐Based Compounds and Solid Solutions

Temperature evolution of quasiparticle dispersion and dynamics in semimetallic 1 T − TiTe 2 via high-resolution angle-resolved photoemission spectroscopy and ultrafast optical pump-probe spectroscopy

Manipulating Spin-Lattice Coupling in Layered Magnetic Topological Insulator Heterostructure $via$ Interface Engineering