Abstract:Electronic and thermoelectric properties of the full‐Heusler materials Co2CrGe, Co2FeGe, and Co2NiGa are studied, using first‐principles full potential linearized augmented plane waves method. To treat the exchange correlation, Generalized Gradient Approximation parameterized by PBE‐sol with the inclusion of spin polarization is used. Metalicity is dominant in all materials, Co2CrGe than Co2FeGe and Co2NiGa as overlapping of states at different symmetry points of the Brillouin zone; however, Co2CrGe shows more metallic character than Co2FeGe and Co2NiGa. In the present case, the materials ferromagnetic ordering is considered and this is also confirmed for the material Co2FeGe using experimental techniques. From the data, it is clear that Co2NiGa is the best thermoelectric material in these compounds. In these calculations, it is found that these materials favor electron doping with having maximum values of ZT in the n‐type region. Electronic and thermoelectric properties of the full‐Heusler materials Co2CrGe, Co2FeGe, and Co2NiGa are studied, using first‐principles full potential linearized augmented plane waves method. To treat the exchange correlation, Generalized Gradient Approximation parameterized by PBE‐sol with the inclusion of spin polarization is used. The frequency fluctuation order is continual at 300 K after heating to 3 ps with very small distraction in the atomic structure conforming the structure stability of the studied structures. Also inclusion of spin‐orbit coupling effect on density of states undermines significant change in peaks specially d‐states in the materials and caused a degeneracy. Band structure analysis clarified that states crossing the Fermi level have the importance for enhancing the thermoelectric properties of the materials. The topology of the states indicates a gap at the bulk level, which is the unique character of the heavy elements in the materials Co2CrGe, Co2FeGe, and Co2NiGa. Thermoelectric properties are calculated for a temperature of 300 K using semi‐classical Boltzmann's theory implemented in BoltzTraP code. In these calculations, it is found that these materials favor electron doping with having maximum values of ZT in the n‐type region.

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