Abstract:Abstract Background: Recording of electrical activity of neurons is indispensable for decoding the information in the brain. The amplitude of signals recorded by electrodes is small, and it must be amplified to the level that can be digitalized by the analog-to-digital convert (ADC). A micro-power low-noise neural recording amplifier is indispensable for implant hippocampal cognitive prosthesis. When the process turns into deep submicron, the gate leakage current of the metal oxide semiconductor (MOS) transistor becomes larger and mismatch between devices becomes worsen. It is necessary to keep the neural amplifier robust in all process corners. Methods: The proposed circuit is a two-stage amplifier which can achieve a good trade-off between power consumption and noise. Four second-stage amplifiers share a common reference amplifier to reduce area and power consumption. A pseudo-resistor with high resistance is utilized to realize a very-low frequency high pass corner without external components. In order to minimize process variation, a bulk-compensated (BC) technique is adopted to maintain adequate tolerance in all corner case. Results: The 4-channel neural amplifier is designed and fabricated in a 40 nm standard complementary metal oxide semiconductor (CMOS) process. It achieves a mid-band gain of 54 dB, a bandwidth of 70 Hz to 7.7 kHz, a total input-referred noise of 3.2 μVrms , and a Noise Efficiency Factor (NEF) of 3.3 while consuming 4.68 µW from the 1.1 V supply. The core area of one channel is only 0.032 mm 2 . Conclusion: A 4-channel integrated neural recording amplifier chip with bias-compensated circuits is presented in this paper. Extensive simulations insure that the design is “center”. The chip layout is verified using design rules check (DRC) and layout versus schematic (LVS) design check with the help of verification tools. Test results shows that it is less sensitive to process variation and consumes less power compared with amplifier without bulk-compensated circuit. This makes the design robust and uniquely appropriate for low-power implant application.

Design of a new CMOS Low-Power Analogue Neuron

A Robust 4-channel Micro-power Low-noise Neural Recording Amplifier for Hippocampal Cognitive Prosthesis

Design of Artificial Neuron Network with Synapse Utilizing Hybrid CMOS Transistors with Memristor for Low Power Applications

CMOS-based area-and-power-efficient neuron and synapse circuits for time-domain analog spiking neural networks

Ultra-Low Power Silicon Neuron Circuit for Extreme-Edge Neuromorphic Intelligence

Analog Spiking Neuron in 28 nm CMOS

Analog Spiking Neuron in CMOS 28 nm Towards Large-Scale Neuromorphic Processors

A Compact and Low-Power SoC Design for Spiking Neural Network Based on Current Multiplier Charge Injector Synapse

Implementation of a Spiking Neuron in CMOS

Compact Digital-Controlled Neuromorphic Circuit with Low Power Consumption

Subthreshold CMOS Implementation of the Izhikevich Neuron Model

Versatile CMOS Analog LIF Neuron for Memristor-Integrated Neuromorphic Circuits

A 5.3 pJ/Spike CMOS Neural Array Employing Time-Modulated Axon-Sharing and Background Mismatch Calibration Techniques

CMOS Implementation of ANNs Based on Analog Optimization of N-Dimensional Objective Functions

Silicon neuron-analog CMOS VLSI implementation and analysis at 180nm

Sub-0.3V CMOS neuromorphic technology and its potential application

Analog circuits for mixed-signal neuromorphic computing architectures in 28 nm FD-SOI technology

A Novel Multiplier For Achieving The Programmability Of Cellular Neural Network

Precise and low-power closed-loop neuromodulation through algorithm-integrated circuit co-design

A Capacitor-Less CMOS Neuron Circuit for Neuromemristive Networks

A Time-domain Analog Weighted-sum Calculation Model for Extremely Low Power VLSI Implementation of Multi-layer Neural Networks