Abstract:Atomically thin semiconductors with superior electronic and optical properties play a critical role in the continuous advances of electronic and optoelectronic devices. Here, using first-principles calculations, we report three new 2D Ge-Sb-Te (GST) compounds, namely one septuple-layer Ge1Sb2Te4 (Ge1Sb2Te4-1 SL), one nonuple-layer Ge2Sb2Te5 (Ge2Sb2Te5-1 NL), and one undecuple-layer Ge3Sb2Te6 (Ge3Sb2Te6-1 UL), as very promising optoelectronic semiconductors for photovoltaic solar cells. It is demonstrated that these hitherto-unknown GST monolayers are highly stable, as they exhibit excellent thermodynamic, dynamical and room temperature thermal stability. Also, owing to the small exfoliation energy, they are expected to be synthesized experimentally by mechanical exfoliation. More importantly, comprehensive investigations show that Ge1Sb2Te4-1 SL, Ge2Sb2Te5-1 NL, and Ge3Sb2Te6-1 UL possess suitable electronic bandgaps (0.837~1.031 eV), extremely low direct-indirect bandgap differences (≤0.031 eV), small carrier effective masses (≤0.26 m0), and good defect tolerance, as well as strong visible-light absorption coefficients (105~106 cm-1). Thanks to these favorable electronic properties and extraordinary optical performance, they are predicted to exhibit high photovoltaic conversion efficiencies of 26~30% at 0.1 μm, appreciably larger than the currently dominant commercial silicon solar cell. In addition, we also reveal that the strain has little effect on the light absorbance of 2D GST crystals, while it can significantly tune their electronic structures and thus the photovoltaic efficiency. Our explorations would render semiconducting 2D GST monolayers a prominent platform for future experimental research and nano-optoelectronic devices.

Single-layer ZnGaInS 4 : Desirable Bandgap and High Carrier Separation Efficiency for Optoelectronics

Efficient Carrier Separation in Graphitic Zinc Oxide and Blue Phosphorus van der Waals Heterostructure

Unexplored single-layer CdIn 2 S 4 : Suitable electronic property and ultrahigh carrier mobility in a wide range of biaxial strains

Single-layer GaInO 3 : Promising material for optoelectronic and out-of-plane piezoelectric devices

Single-layer and bilayer In2SeO2: Direct bandgap and reduced exciton binding from first-principles calculation

Two-Dimensional N-Inse/P-Gese(Sns) Van Derwaals Heterojunctions: High Carrier Mobility And Broadband Performance

Type-II Lateral Heterostructures of Monolayer Halide Double Perovskites for Optoelectronic Applications

Efficient Carrier Separation and Band Structure Tuning of Two-Dimensional C2N/GaTe Van Der Waals Heterostructure

Effective carrier separation in zinc oxide and boron phosphide van der Waals heterostructure

Single-layer GaInS3: Water-splitting photocatalyst with high solar conversion efficiency and long carrier lifetime from first-principles investigation

Structural, electronic, and excitonic properties of few-layer Se S 2 and Te S 2

Intercalated Architecture of the Ca2A2Z5 Monolayer with High Electron Mobilities and High Power Conversion Efficiencies

The 2D InSe/WS 2 Heterostructure with Enhanced Optoelectronic Performance in the Visible Region

Achieving Tunable Band Structure and Photocarrier Dynamics by Regulating 2D Atomic Layer Stacking Toward High-Performance Self-Powered Broadband and Deep-UV Photodetection

Air‐Stable Wide‐Bandgap 2D Semiconductor ZnIn2S4

Two-dimensional InSe/WS$_2$ heterostructure with enhanced optoelectronic performance in the visible region

Unraveling the Emerging Photocatalytic, Thermoelectric, and Topological Properties of Intercalated Architecture MZX (M = Ga and In; Z = Si, Ge and Sn; X = S, Se, and Te) Monolayers

Electrically tunable bandgaps for g-ZnO/ZnX (X = S, Se, Te) 2D semiconductor bilayers

Air‐Stable Wide‐Bandgap 2D Semiconductor ZnIn <sub>2</sub> S <sub>4</sub>

New Two-Dimensional Ge-Sb-Te Semiconductors with High Photovoltaic Performance for Solar Energy Conversion

Improvement and optimization of Cu2ZnSn(S1-xSex)4 structure for optoelectronic applications