Tunable giant Goos–Hänchen shift in Au–ReS_2–graphene heterostructure

Yunpeng Yan,Mingjie Zha,Junxi Liu,Jiaxing Tu,Zhibo Liu

DOI: https://doi.org/10.1364/ol.528817

IF: 3.6

2024-06-14

Optics Letters

Abstract:Yunpeng Yan, Mingjie Zha, Junxi Liu, Jiaxing Tu, Zhibo Liu Enhancing and flexibly controlling the Goos–Hänchen (GH) shift directly is a significant challenge. Here, we report a tunable ... [Opt. Lett. 49, 3484-3487 (2024)]

optics

What problem does this paper attempt to address?

Controllable Goos-Hänchen Shift in Photonic Crystal Heterostructure Containing Anisotropic Graphene

Haishan Tian,Huabing Wang,Jingke Zhang,Gang Sun

DOI: https://doi.org/10.3390/coatings14091092

IF: 3.236

2024-08-28

Coatings

Abstract:In this study, we investigate the electrically and magnetically tunable Goos–Hänchen (GH) shift of a reflected light beam at terahertz frequencies. Our study focuses on a photonic crystal heterostructure incorporating a monolayer anisotropic graphene. We observe a tunable and enhanced GH shift facilitated by a drastic change in the reflected phase at the resonance angle owing to the excitation of the topological edge state. Considering the quantum response of graphene, we demonstrate the ability to switch positive and negative GH shifts through the manipulation of graphene's conductivity properties. Moreover, we show that the GH shift can be actively tuned by the external electric field and magnetic field, as well as by controlling the structural parameters of the system. We believe that this tunable and enhanced GH shift scheme offers excellent potential for preparing terahertz shift devices.

materials science, multidisciplinary,physics, applied, coatings & films
Giant Goos-Hanchen Shift In Graphene Double-Barrier Structures

Yu Song,Hanchun Wu,Yong Guo

DOI: https://doi.org/10.1063/1.4730440

IF: 4

2012-01-01

Applied Physics Letters

Abstract:We report giant Goos-Hanchen shifts [Goos and Hanchen, Ann. Phys. 436, 333 (1947)] for electron beams tunneling through graphene double barrier structures. We find that inside the transmission gap for the single barrier, the shift displays sharp peaks with magnitudes up to the order of electron beam width and rather small full-widths-at-half-maximum, which may be utilized to design valley and spin beam splitters with wide tunability and high energy resolution. We attribute the giant shifts to quasibound states in the structures. Moreover, an induced energy gap in the dispersion can increase the tunability and resolution of the splitters. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4730440]
Giant and controllable Goos-Hanchen shift of monolayer graphene strips enabled by a multilayer dielectric grating structure

Changwei Zhang,Ye Hong,Zhengyang Li,Haixia Da

DOI: https://doi.org/10.1364/AO.445558

IF: 1.9

2022-01-01

Applied Optics

Abstract:The discovery of monolayer graphene allows the unprecedented chance for exploring its Goos-Hanchen (GH) shift. However, most of the pronounced CH shifts are achieved in various structures with two-dimensional continuous monolayer graphene. Here, we report on the giant GH shift of reflected wave in monolayer graphene strips by constructing the multilayer dielectric grating structure under them. The observed GH shift here is as high as 7000 times that of the incident wave at the near-infrared frequency region, whose magnification is significantly larger than that of the monolayer graphene ribbon array. We further elucidate that the enhanced GH shift originates from the guided mode resonance of the dielectric grating structure and its magnitude and sign can be manipulated by chemical potential of the monolayer graphene strip. Our work enables a promising route for enhancing and controlling the GH shifts of reflected wave in monolayer graphene strips, which might contribute to their applications in biosensors and detectors. (C) 2022 Optica Publishing Group
Electrically Tunable Goos–Hänchen Effect with Graphene in the Terahertz Regime

Yuancheng Fan,Nian-Hai Shen,Fuli Zhang,Zeyong Wei,Hongqiang Li,Qian Zhao,Quanhong Fu,Peng Zhang,Thomas Koschny,Costas M. Soukoulis

DOI: https://doi.org/10.1002/adom.201600303

IF: 9

2016-01-01

Advanced Optical Materials

Abstract:Goos–Hänchen (G–H) effect is of great interest in the manipulation of optical beams. However, it is still fairly challenging to attain efficient controls of the G–H shift for diverse applications. Here, a mechanism to realize tunable G–H shift in the terahertz regime with electrically controllable graphene is proposed. Taking monolayer graphene covered epsilon‐near‐zero metamaterial as a planar model system, it is found that the G–H shifts for the orthogonal s‐polarized and p‐polarized terahertz beams at oblique incidence are positive and negative, respectively. The G–H shift can be modified substantially by electrically controlling the Fermi energy of the monolayer graphene. Reversely, the Fermi energy dependent G–H effect can also be used as a strategy for measuring the doping level of graphene. In addition, the G–H shifts of the system are of strong frequency‐dependence at oblique angles of incidence, therefore the proposed graphene hybrid system can potentially be used for the generation of terahertz “rainbow,” a flat analog of the dispersive prism in optics. The proposed scheme of hybrid system involving graphene for dynamic control of G–H shift will have potential applications in the manipulation of terahertz waves.
Tunable and enhanced Goos Hanchen shifts in a monolayer graphene-based metallic grating structure

Ye Hong,Zhengyang Li,Changwei Zhang,Haixia Da

DOI: https://doi.org/10.1364/JOSAB.442701

2022-01-01

Abstract:The Goos-Hanchen (GH) effect, a lateral displacement of the reflection beam, enables rich applications in sensors and detectors. Metallic grating structures have gained great attention due to their unique properties, such as enhanced optical transmission and surface enhanced Raman scattering. Here, instead of using the dielectric grating, we demonstrate an enhanced GH shift in the structure with the metallic grating layer, monolayer graphene, dielectric spacer, and metallic substrate. We find that the amplitude of the GH shift is as high as 3616 times of the incident wavelength at the specific working frequency. This enhancement can be understood from the generation of the coupled surface plasmon polaritons between two surfaces of the dielectric space layer. Furthermore, we show efficient control of the GH shift by modulating the geometric parameters of the proposed structure and chemical potential of the monolayer graphene. Our result establishes an alternative metallic grating structure for tunable and enhanced GH shifts in graphene-based nanostructures. (C) 2021 Optical Society of America
Nonreciprocal Goos-Hänchen shift in a Dirac semimetal based asymmetric photonic crystal structure

Pengya Hu,Jun Zhou,Qi Song,Haixia Da

DOI: https://doi.org/10.1364/ao.506487

IF: 1.9

2024-01-09

Applied Optics

Abstract:Pengya Hu, Jun Zhou, Qi Song, Haixia Da The generation and control of the Goos-Hänchen (GH) shift is a vital step toward its realistic applications, but investigations have ... [Appl. Opt. 63, 459-466 (2024)]

optics
Enhanced Goos-Hänchen Shift of Graphene Via Hybrid Structure with Dielectric Grating, Metallic Layer and Photonic Crystal

Zhengyang Li,Changwei Zhang,Ye Hong,Haixia Da,Xiaohong Yan

DOI: https://doi.org/10.1016/j.physe.2022.115272

2022-01-01

Abstract:Despite the Goos-Hänchen (GH) shifts have recently been discussed in metallic multilayer or dielectric grating structure with monolayer graphene, its investigation on their combined structure is quite limited. In this work, we theoretically propose a new hybrid structure consisting of single layer graphene (SLG), a dielectric grating, a metal film, and one-dimensional photonic crystal (1DPC) and reveal this structure can achieve the GH shift as high as 7430 times of the incident wavelength, which is induced by the surface plasmon resonance (SPR) in the metal layer and the waveguide mode in the 1DPC. Additionally, we find that the positive or negative sign of the GH shift in this structure can be engineering by Fermi energy of SLG, which is unattainable in monolayer graphene based dielectric grating structure. Our results offer the new platform for enhancing and controlling GH shifts.
Quantum Goos-Hänchen Switch in Graphene Junctions

Z. B. Zhang,Rui Wang,Baigeng Wang,D. Y. Xing

DOI: https://doi.org/10.1088/1367-2630/ad0eee

2023-01-01

New Journal of Physics

Abstract:Goos-Hänchen (GH) shift, an interference phenomenon describing the lateral shift of the reflected beam along the interface during total internal reflection, has attracted great interests in the field of quantum transport in two-dimensional materials. In particular, the GH effect generates a novel pseudospin-dependent scattering effect in graphene, which in turn results in an $8e^{2}/h$ conductance step in the bipolar junctions. Here, we reveal that a barrier region with effective barrier strength χ can greatly enrich the GH effect in graphene junctions. In contrast to the conventional case where the negative shift is allowed only in the p - n junction, the thin barrier enables both negative and positive spatial shifts in p I n and n I n junctions, where I represents the barrier region. More interestingly, the lowest channel degeneracy can be efficiently varied by tuning χ in both the symmetric p I n I p and the asymmetric pn I p junctions, leading to a highly controllable switch that switches the conductance between $8e^{2}/h$ and $4e^{2}/h$ . These results advance the knowledge of GH effects in electronic materials and suggest experimental avenues for its observation and manipulation.
Tunable Electron Wave Filter and Goos–Hänchen Shift in Asymmetric Graphene Double Magnetic Barrier Structures

Y. Wang,Y. Liu,B. Wang

DOI: https://doi.org/10.1016/j.spmi.2013.04.035

IF: 3.22

2013-01-01

Superlattices and Microstructures

Abstract:Electronic transmission and Goos-Hanchen shift for Dirac fermions in asymmetric graphene double magnetic barrier structure are investigated theoretically. Numerical results for rectangular barriers demonstrate that a transmission gap appears owing to the magnetic confinement and the width of gap is dependent on the incident angle and changed by the width of barrier and the distance between the double barriers. At the edge of the transmission gap, the Goos-Hanchen shifts of electrons have strong peaks and are tuned by the structure parameters. Furthermore, for the real magnetic structure induced by ferromagnetic strips, the transmission gap and GH shift remain. The tunable transmission gap indicates that the graphene magnetic structure can be use as electron wave filter and the tunable GH shift shows that the structure can be applied to laterally manipulate Dirac fermions in graphene. (C) 2013 Elsevier Ltd. All rights reserved.
Electrically Tunable Photoresponse In A Graphene Heterostructure Photodetector

Dehui Zhang,Gong Cheng,Zhen Xu,Che Hung Liu,Thomas E. Beechem,Michael Goldflam,David W. Peters,Minmin Zhou,Theodore B. Norris,Zhaohui Zhong

DOI: https://doi.org/10.1364/CLEO_SI.2017.SF2I.2

2017-01-01

Abstract:We report an electrically tunable photodetector design based on photogating effect in graphene heterostructures. We demonstrate electrically tunable photoresponse up to 60 A/W with a sub-millisecond speed. The detector's spectra tunability will also be investigated.
Asymmetric Modulation on Exchange Field in a Graphene/BiFeO3 Heterostructure by External Magnetic Field.

Hua-Ding Song,Yan-Fei Wu,Xin Yang,Zhaohui Ren,Xiaoxing Ke,Mert Kurttepeli,Gustaaf Van Tendeloo,Dameng Liu,Han-Chun Wu,Baoming Yan,Xiaosong Wu,Chun-Gang Duan,Gaorong Han,Zhi-Min Liao,Dapeng Yu

DOI: https://doi.org/10.1021/acs.nanolett.7b05480

IF: 10.8

2018-01-01

Nano Letters

Abstract:Graphene, having all atoms on its surface, is favorable to extend the functions by introducing the spin-orbit coupling and magnetism through proximity effect. Here, we report the tunable interfacial exchange field produced by proximity coupling in graphene/BiFeO3 heterostructures. The exchange field has a notable dependence with external magnetic field, and it is much larger under negative magnetic field than that under positive magnetic field. For negative external magnetic field, interfacial exchange coupling gives rise to evident spin splitting for N ≠ 0 Landau levels and a quantum Hall metal state for N = 0 Landau level. Our findings suggest graphene/BiFeO3 heterostructures are promising for spintronics.
Coherent Control of Goos-Hänchen Shift in a Guided-Wave Surface Plasmon Resonance Structure with Rydberg Atoms

Dingyu Cai,Mengmeng Luo,Yuetao Chen,Shaoyan Gao

DOI: https://doi.org/10.1016/j.rio.2021.100065

2021-01-01

Results in Optics

Abstract:We proposed an effective and flexible scheme to achieve tunable giant Goos-Hänchen (GH) shift of reflected light in the configuration of guided-wave surface plasmon resonance with Rydberg atoms. With the super atom model of Rydberg atom due to the dipole blocking effect, we investigated the influence of Rydberg state population on GH displacement. By adjusting the external driving field on Rydberg atoms without changing the structure geometry, not only can GH shift be enhanced significantly to the magnitude of millimeter, but also the transition between positive and negative GH shift can be controlled at the same resonant angles. Furthermore, the resonant angle position of the maximum GH shift is also tunable via detuning the field. Our scheme may offer promising prospects for the optical switches and nano-sensors with high precision.
Temporal Goos-Hänchen Shift in Synthetic Discrete-Time Heterolattices

Chengzhi Qin,Shulin Wang,Bing Wang,Xinyuan Hu,Chenyu Liu,Yinglan Li,Lange Zhao,Han Ye,Stefano Longhi,and Peixiang Lu

DOI: https://doi.org/10.1103/physrevlett.133.083802

IF: 8.6

2024-08-22

Physical Review Letters

Abstract:Experimental demonstration of tunable temporal Goos-Hänchen shift (GHS) in synthetic discrete-time heterolattices with scalar and vector gauge potentials is reported. By using Heaviside-function modulation in two fiber loops, we create a sharp gauge-potential interface and observe temporal GHS for total internal reflection (TIR), which manifests as a time delay rather than a spatial shift. The TIR occurs as the incident mode falls into the band gap of transmitted region with band shifting by scalar and vector potential. We find that both scalar and vector potential codetermine GHS by controlling the decay (imaginary part) and oscillation (real part) of a penetrated evanescent wave, in stark contrast to traditional spatial GHS only determined by the decay factor. We also observe diverging characteristics of GHS at band-gap edges where evanescent-to-propagating wave transition occurs. GHS for frustrated total internal reflection (FTIR) by a finite-width evanescent barrier is also demonstrated, which shows saturation properties to the single-interface TIR case under infinite-width limit. Finally, we develop an accumulation measurement method using multiple TIRs to improve the precision for measuring even tinier GHS. The study initiates precise measurement of temporal GHS for discrete-time reflections, which may feature potential applications in precise time-delay control and measurement. https://doi.org/10.1103/PhysRevLett.133.083802 © 2024 American Physical Society

physics, multidisciplinary
Controlling Goos-Hänchen shifts in phosphorene via barrier and well

Jilali Seffadi,Hocine Bahlouli,Ahmed Jellal

DOI: https://doi.org/10.1007/s00339-024-07969-8

2024-10-18

Abstract:We study the effect of the double potentials (barrier, well) on the Goos-Hänchen (GH) shifts in phosphorene. We determine the solutions of the energy spectrum associated with the five regions that make up our system. By studying the phase shifts, we find that the GH shifts are highly sensitive to the incident energy, the $y$ directional wave vector, the potential heights and widths. To validate our findings, we perform a numerical analysis of the GH shifts as a function of the transmission probability under various conditions. In particular, we observe a consistent pattern in which a positive peak in the GH shift is always followed by a negative valley, a behavior evident at all potential height values. Notably, the energies at which the GH shift changes sign coincide exactly with the points at which transmission drops to zero. In particular, the transmission resonances that occur just before and just after the transmission gap region are strongly correlated with the points at which the GH shift changes sign. This study advances our understanding of how the double potential influences the GH shift behaviors in phosphorene. The ability to fine-tune the GH shifts by changing system parameters suggests potential applications in optical and electronic devices using this two-dimensional material.

Mesoscale and Nanoscale Physics
Electrical Control of the Superconducting-to-Insulating Transition in Graphene/Metal Hybrids

Adrien Allain,Zheng Han,Vincent Bouchiat

DOI: https://doi.org/10.1038/nmat3335

2012-04-10

Abstract:Graphene is a sturdy and chemically inert material exhibiting an exposed two-dimensional electron gas of high mobility. These combined properties enable the design of graphene composites either based on covalent or non- covalent coupling of adsorbates, or on multilayered structures. These systems have exhibited novel tunable electronic properties such as bandgap- engineering, reversible metal/insulating transition or supramolecular spintronics. Tunable superconductivity is expected as well, but experimental realization is lacking. Here, we show experiments based on me tal/graphene hybrid composites, enabling the control of proximity coupling of an array of superconducting nanoparticles onto a macroscopic graphene sheet. This material allows at low temperature to tune the superconductivity down to a strongly insulating state. It results from the combination of a proximity-induced superconductivity generated by the metallic nanoparticles array with the two-dimensional and tunable metallicity of graphene. The resulting hybrid material behaves, as a whole, like a granular 2D superconductor showing universal transition threshold and localization of Cooper pairs in the insulating phase. This experiment sheds light on the emergence of superconductivity in inhomogeneous superconduc- tors, and more generally it demonstrates the potential of graphene as a versatile building-block for the realization of novel superconducting materials.

Mesoscale and Nanoscale Physics,Materials Science,Superconductivity
Goos-Hänchen shifts around Fano resonances in superconducting photonic crystals embedded with graphene

Hao Ni,Siliu Xu,Fanghua Liu,Fangmei Liu,Miaomiao Zhao,Dong Zhao

DOI: https://doi.org/10.1016/j.optlastec.2024.112186

IF: 4.939

2024-12-01

Optics & Laser Technology

Abstract:Lateral Goos-Hänchen (GH) shifts at the Fano resonances are theoretically investigated in superconducting photonic crystals. The photonic system consists of superconductor layer pairs with embedded graphene and a dielectric layer. With an oblique incident light, multiple Fano resonances are realized in the transmission spectrum because of the embedded graphene. Large GH shifts of the reflected light, including positive ( Δ p ) and negative ( Δ n ) GH shifts, are obtained around the Fano resonances. The GH shifts almost keep stable for different chemical potentials of graphene. By decreasing hydrostatic pressure or incident angle, larger Δ p and | Δ n | are achieved and the corresponding frequency has a redshift. By increasing the ambient temperature, Δ p and | Δ n | first increase smoothly and then decrease sharply. Overall, Δ p is more sensitive than Δ n , while the reflectance corresponding to Δ n is much larger than that corresponding to Δ p . Large and tunable GH shifts in our study may have great potential for optical detectors and transducers.

optics,physics, applied
Electrochemical gating for single-molecule electronics with hybrid Au|graphene contacts

Shuhui Tao,Qian Zhang,Andrea Vezzoli,Cezhou Zhao,Chun Zhao,Alexander Smogunov,Li Yang,Simon J. Higgins,Yannick J. Dappe,Richard J. Nichols

DOI: https://doi.org/10.1039/d1cp05486d

IF: 3.3

2022-01-01

Physical Chemistry Chemical Physics

Abstract:A ‘‘off–on–off’’ conductance switching of graphene-contacted single molecular junctions has been reported for the first time using the STM- I (s) method under the electrochemical control. Experimental results are discussed against both a phase coherent tunnelling and an incoherent hopping model.

chemistry, physical,physics, atomic, molecular & chemical
Tailoring Dirac Fermions by In-Situ Tunable High-Order Moire acute accent Pattern in Graphene-Monolayer Xenon Heterostructure

Chunlong Wu,Qiang Wan,Cao Peng,Shangkun Mo,Renzhe Li,Keming Zhao,Yanping Guo,Shengjun Yuan,Fengcheng Wu,Chendong Zhang,Nan Xu

DOI: https://doi.org/10.1103/PhysRevLett.129.176402

IF: 8.6

2022-01-01

Physical Review Letters

Abstract:We report an experimental study of a high-order moire ' pattern formed in graphene-monolayer xenon heterostructure. The moire ' period is in situ tuned from few nanometers to +co, by adjusting the lattice constant of the xenon monolayer through annealing. Using angle-resolved photoemission spectroscopy, we observe that Dirac node replicas move closer and finally overlap with a gap opening, as the moire ' pattern expands to +co and evolves into a Kekule ' distortion. A moire ' Hamiltonian coupling Dirac fermions from different valleys explains experimental results and indicates narrow moire ' band. Our Letter demonstrates a platform to study continuous evolution of the moire ' pattern, and provides an unprecedented approach for tailoring Dirac fermions with tunable intervalley coupling.
Effect of Goos Hänchen shift of the light transmitted through a mixture of the graphene hyperbolic metamaterial and 1D superconducting photonic crystals

Tao Zhang,Ming-Yu Mao,Yu Ma,Dan Zhang,Hai-Feng Zhang

DOI: https://doi.org/10.1016/j.ijleo.2020.165636

IF: 3.1

2020-12-01

Optik

Abstract:In this paper, the graphene hyperbolic metamaterial (GHMM) and one-dimensional (1D) superconductor (YBa2Cu3O7-x) photonic crystals are combined to observe the Goos Hänchen (GH) shift by studying the lateral shift under the TE wave in the terahertz (THz) regime. GHMM consists of a monolayer of graphene and a layer of conventional dielectric. It indicates that the proposed 1D dielectric structure can produce a larger GH shift. The movements of the GH shifts can be observed through tailoring the dielectric length and three parameters of graphene which are chemical potential, phenomenon scattering rate, and temperature, respectively. Moreover, the relationship between the GH shift and the real part of nG for the GHMM (RnG) also is studied. We find that altering the above four parameters to produce the larger GH shifts is mainly concentrated in the frequency range of 30-50 THz and 70- 90 THz, and the larger RnG can lead to the more obvious GH shift.

optics
Giant Frequency Tunability Enabled by External Magnetic and a Gate Electric Fields in Graphene Devices

Xiang Hu,Qiuping Huang,Yi Zhao,Honglei Cai,Randy J. Knize,Yalin Lu

DOI: https://doi.org/10.1364/oe.24.006606

IF: 3.8

2016-01-01

Optics Express

Abstract:Graphene possesses a unique Landau level system that is non-equidistantly spaced in energy, as thus a large amount of optical transitions may become possible. Here, by utilizing this unique feature, we propose a novel dual field method which combines both external magnetic field and gate electric field together to control the optical response of the graphene-based devices. The key principle of this method is to selectively allow different optical transitions in graphene among Landau levels via an electric gate tuning of the Fermi level. By applying this method to a graphene based amplitude modulator and through an implementation based on transfer matrix method, we numerically demonstrated the well characteristics of switchable modulation on four individual channels, a huge modulation depth up to 80 dB and an extremely low required energy of tuning Fermi level down to 10 meV. Such excellent frequency tunability and gate controlling ability of this dual field method may open up the potential for applications in active optoelectronics, spin optics, ultrafast optics and etc.

Tunable giant Goos–Hänchen shift in Au–ReS_2–graphene heterostructure

Controllable Goos-Hänchen Shift in Photonic Crystal Heterostructure Containing Anisotropic Graphene

Giant Goos-Hanchen Shift In Graphene Double-Barrier Structures

Giant and controllable Goos-Hanchen shift of monolayer graphene strips enabled by a multilayer dielectric grating structure

Electrically Tunable Goos–Hänchen Effect with Graphene in the Terahertz Regime

Tunable and enhanced Goos Hanchen shifts in a monolayer graphene-based metallic grating structure

Nonreciprocal Goos-Hänchen shift in a Dirac semimetal based asymmetric photonic crystal structure

Enhanced Goos-Hänchen Shift of Graphene Via Hybrid Structure with Dielectric Grating, Metallic Layer and Photonic Crystal

Quantum Goos-Hänchen Switch in Graphene Junctions

Tunable Electron Wave Filter and Goos–Hänchen Shift in Asymmetric Graphene Double Magnetic Barrier Structures

Electrically Tunable Photoresponse In A Graphene Heterostructure Photodetector

Asymmetric Modulation on Exchange Field in a Graphene/BiFeO3 Heterostructure by External Magnetic Field.

Coherent Control of Goos-Hänchen Shift in a Guided-Wave Surface Plasmon Resonance Structure with Rydberg Atoms

Temporal Goos-Hänchen Shift in Synthetic Discrete-Time Heterolattices

Controlling Goos-Hänchen shifts in phosphorene via barrier and well

Electrical Control of the Superconducting-to-Insulating Transition in Graphene/Metal Hybrids

Goos-Hänchen shifts around Fano resonances in superconducting photonic crystals embedded with graphene

Electrochemical gating for single-molecule electronics with hybrid Au|graphene contacts

Tailoring Dirac Fermions by<i> In</i><i>-Situ</i> Tunable High-Order Moire acute accent Pattern in Graphene-Monolayer Xenon Heterostructure

Effect of Goos Hänchen shift of the light transmitted through a mixture of the graphene hyperbolic metamaterial and 1D superconducting photonic crystals

Giant Frequency Tunability Enabled by External Magnetic and a Gate Electric Fields in Graphene Devices