Abstract:A growing adoption of Terahertz (THz) frequency across various applications is witnessed in the recent years. This specific frequency range is said to yield a breakthrough in high-speed electronics and communications, besides its significant role in the medical field regarding scanning and treatment. As frequency absorbers are one of the common blocks in the mentioned applications, they were the focus of many research work. In this paper, we present a theoretical model for a selective THz frequency absorber that has more than 90 % absorptivity and can reach 95 % and near unity absorptivity at some frequencies. The structure is based on monolayers of nanoribbons of graphene, MoS 2 , and phosphorene. The utilization of the surface plasmon oscillations of these two-dimensional (2D) materials, in addition to the impedance matching, is employed to achieve maximum absorptivity. The structure has an electrically tunable selective frequency from 1.3 THz to 10 THz that nearly covers the whole THz range, and a bandwidth ranging from 0.9 THz to 1.3 THz. Electrical tunability is done through varying the applied voltage on the MoS 2 /graphene heterostructure (0.2 V ∼ 5 V) based on the tunable conductivity of graphene. In addition to the voltage tunability of the design, the absorption frequency is also swept by varying the nanoribbons widths (20 nm ∼ 160 nm). The proposed design surpasses previous ones by its simple structure and high absorption through the entire THz range, besides its low cost of fabrication. The structure is ultrathin (∼10 nm) that it can fit in ultrathin electronics. It has a relatively small bandwidth compared to previous work, that represents the basis for narrowband absorbers. The structure is simulated using the finite element method (FEM) and verified using the transmission line circuit theory which demonstrated the validity of the structure for higher frequency ranges. The possibility of future synthesis is also discussed.

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