Pt/ZnGa 2 O 4 /p-Si Back-to-Back Heterojunction for Deep UV Sensitive Photovoltaic Photodetection with Ultralow Dark Current and High Spectral Selectivity

Dan Zhang,Zhuogeng Lin,Wei Zheng,Feng Huang
DOI: https://doi.org/10.1021/acsami.1c23453
2022-01-24
Abstract:In this work, a strategy of constructing a back-to-back heterojunction is proposed to fabricate Si-based photovoltaic photodetectors with high deep ultraviolet (DUV) spectral selectivity. By combining Pt with a thickness of 4 nm with a ZnGa<sub>2</sub>O<sub>4</sub>/Si heterojunction, a back-to-back heterojunction is successfully constructed. Based on that, a Pt/ZnGa<sub>2</sub>O<sub>4</sub>/p-Si DUV photovoltaic detector with a low dark current density (∼9.6 × 10<sup>-5</sup> μA/cm<sup>2</sup>), a large photo-to-dark current ratio (PDCR, &gt;10<sup>5</sup>), and a fast response speed (decay time &lt;50 ms) is fabricated. At 0 V bias, this device displays a photoresponsivity of about 1.36 mA/W and a high deep ultraviolet-visible (DUV-vis) rejection ratio (<i>R</i><sub>258 nm</sub>/<i>R</i><sub>420 nm</sub>) of ∼1.1 × 10<sup>5</sup>, which are 1-2 orders of magnitude higher than those of most photovoltaic DUV detectors reported currently. Even at a working temperature of 470 K, the detectivity of this device can still reach ∼1.23 × 10<sup>10</sup> Jones. In addition, compared with Au/ZnGa<sub>2</sub>O<sub>4</sub>/Si devices, the dark current and PDCR of this Pt/ZnGa<sub>2</sub>O<sub>4</sub>/Si device decrease by 2 orders of magnitude and increase by 1 order of magnitude, respectively. The enhanced performance of this ZnGa<sub>2</sub>O<sub>4</sub>/Si device can be attributed to the higher Schottky barrier established between Pt with a higher work function and ZnGa<sub>2</sub>O<sub>4</sub>. This strategy of adopting a back-to-back heterojunction device structure to hinder the visible light photoresponse of Si-based photodetectors and thus to reduce the dark current of a device can provide a reference for preparing photovoltaic DUV detectors with excellent performance.
materials science, multidisciplinary,nanoscience & nanotechnology
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