Abstract:Electron spin resonance studies of a bulk antiferromagnetic semiconductor CrSBr single crystal revel: 2D magnetism, room temperature magnetic anisotropy, spin–spin correlations as well as the formation of potential topological vortex and anti‐vortex pairs predicted by the BKT model. These findings together with the chemical stability and semiconducting properties, make CrSBr a promising layered magnet for future magneto‐ and topological electronic applications. 2D magnets represent material systems in which magnetic order and topological phase transitions can be observed. Based on these phenomena, novel types of computing architectures and magnetoelectronic devices can be envisaged. Unlike conventional magnetic films, their magnetism is independent of the substrate and interface qualities, and 2D magnetic properties manifest even in formally bulk single crystals. However, 2D magnetism in layered materials is rarely reported often due to weak exchange interactions and magnetic anisotropy, and low magnetic transition temperatures. Here, the electron spin resonance (ESR) properties of a layered antiferromagnetic CrSBr single crystal are reported. The W‐like shape angular dependence of the ESR linewidth provides a signature for room temperature spin–spin correlations and for the XY spin model. By approaching the Néel temperature the arising of competing intralayer ferromagnetic and interlayer antiferromagnetic interactions might lead to the formation of vortex and antivortex pairs. This argument is inferred by modeling the temperature dependence of the ESR linewidth with the topological Berezinskii‐Kosterlitz‐Thouless phase transition. These findings together with the chemical stability and semiconducting properties, make CrSBr a promising layered magnet for future magneto‐ and topological‐electronics.

Layer-dependent interlayer antiferromagnetic spin reorientation in air-stable semiconductor CrSBr

Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr

Intrinsic magnetic properties of the layered antiferromagnet CrSBr

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements

Calculated magnetic exchange interactions in the van der Waals layered magnet CrSBr

Surface‐Sensitive Detection of Magnetic Phase Transition in Van Der Waals Magnet CrSBr

Interlayer electronic coupling on demand in a 2D magnetic semiconductor

Revealing 2D Magnetism in a Bulk CrSBr Single Crystal by Electron Spin Resonance

Magnetic Order and Symmetry in the 2D Semiconductor CrSBr

Stacking-Dependent Interlayer Magnetic Coupling in 2D CrI3/CrGeTe3 Nanostructures for Spintronics

Origin and regulation of triaxial magnetic anisotropy in the ferromagnetic semiconductor CrSBr monolayer

Magnetic–Electronic Coupling in the Strained Bilayer CrSBr

Imaging nanomagnetism and magnetic phase transitions in atomically thin CrSBr

Layer and Doping Tunable Ferromagnetic Order in Two-Dimensional CrS2 Layers

Nanoscale magnetism and magnetic phase transitions in atomically thin CrSBr

Ferromagnetic Interlayer Coupling in CrSBr Crystals Irradiated by Ions

Triaxial magnetic anisotropy in the two-dimensional ferromagnetic semiconductor CrSBr

CrSBr: An Air-Stable, Two-Dimensional Magnetic Semiconductor

Room-temperature ferromagnetism and half-metallicity in monolayer orthorhombic CrS2