Abstract:Understanding the excitonic nature of excited states in two-dimensional (2D) transition-metal dichalcogenides (TMDCs) is of key importance to make use of their optical and charge transport properties in optoelectronic applications. We contribute to this by the direct experimental determination of the exciton binding energy (E-b,E-exc) of monolayer MoS2 and WSe2 on two fundamentally different substrates, i.e. the insulator sapphire and the metal gold. By combining angle-resolved direct and inverse photoelectron spectroscopy we measure the electronic band gap (E-g), and by reflectance measurements the optical excitonic band gap (E-exc). The difference of these two energies is E-b, exc. The values of Eg and E-b,E-exc are 2.11 eV and 240 meV for MoS2 on sapphire, and 1.89 eV and 240 meV for WSe2 on sapphire. On Au Eb, exc is decreased to 90 meV and 140 meV for MoS2 and WSe2, respectively. The significant E-b, exc reduction is primarily due to a reduction of E-g resulting from enhanced screening by the metal, while E-exc is barely decreased for the metal support. Energy level diagrams determined at the K-point of the 2D TMDCs Brillouin zone show that MoS2 has more p-type character on Au as compared to sapphire, while WSe2 appears close to intrinsic on both. These results demonstrate that the impact of the dielectric environment of 2D TMDCs is more pronounced for individual charge carriers than for a correlated electron-hole pair, i.e. the exciton. A proper dielectric surrounding design for such 2D semiconductors can therefore be used to facilitate superior optoelectronic device function.

Characterization of 2D Transition Metal Dichalcogenides Through Anisotropic Exciton Behaviors (Small Methods 5/2024)

Characterization of 2D Transition Metal Dichalcogenides Through Anisotropic Exciton Behaviors

Research Progress on the Preparations, Characterizations and Applications of Large Scale 2D Transition Metal Dichalcogenides Films

Monitoring the Material Quality of Two-Dimensional Transition Metal Dichalcogenides

Spontaneous exciton dissociation in transition metal dichalcogenide monolayers

Optically Facet-Resolved Reaction Anisotropy in Two-Dimensional Transition Metal Dichalcogenides

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

First principles coupled cluster theory of the electronic spectrum of the transition metal dichalcogenides

Microstructure and Elastic Constants of Transition Metal Dichalcogenide Monolayers from Friction and Shear Force Microscopy

Direct Determination of Monolayer MoS2 and WSe2 Exciton Binding Energies on Insulating and Metallic Substrates

Defects and Defect Engineering of Two-Dimensional Transition Metal Dichalcogenide (2D TMDC) Materials

Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides

Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor.

Transient Nanoscopy of Exciton Dynamics in 2D Transition Metal Dichalcogenides

Reducing Atomic Defects in 2D Transition Metal Dichalcogenides

Defects inducing anomalous exciton kinetics in monolayer WS2

Anisotropic Collective Charge Excitations in Quasimetallic 2D Transition‐Metal Dichalcogenides

Unraveling High-Yield Phase-Transition Dynamics in Transition Metal Dichalcogenides on Metallic Substrates.

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

Chalcogen Vacancy Engineering of Two-Dimensional Transition Metal Dichalcogenides for Electronic Applications

Transition Metal Trichalcogenides: Birefringence and Dichroism in Quasi‐1D Transition Metal Trichalcogenides: Direct Experimental Investigation (Small 21/2021)