Abstract:Electron–phonon coupling plays a key role in affecting the properties of the semiconducting nanostructures, such as providing the possibility for obtaining higher superconducting transition temperatures. Here, using Raman, temperature‐dependent and polarized Raman scattering measurements, ultra‐strong electron–phonon coupling in 1D CdS nanowires and 2D graphene heterostructures is demonstrated. The intensity ratio of 2LO/1LO mode in CdS nanowires provides a spectroscopy‐based method to quantify electron–phonon coupling, the strength of which is temperature and polarization dependent. The intensity ratio mode of 2LO/1LO in heterostructure reached up to 8.95 when the incident laser polarization is parallel to the c‐axis of the nanowire. It is ≈2.37 times higher than in an individual nanowire. In addition, in situ and time‐resolved photoluminescence spectra demonstrate the dynamics of the exciton recombinations, providing a comprehensive understanding of the enhancement of electron–phonon coupling in heterostructures. Via optical waveguiding characterization, the graphene layer is demonstrated to not only be an ultrafast carrier transfer channel but also a low Fermi level channel that induces the formation of the built in electrical field, elevating the electron–phonon coupling. Such new mixed dimensional heterostructures illustrate a straightforward approach to enhance the electron–phonon coupling, which may be applied to many integrated superconducting photonic and optoelectronic devices. Due to the formation of the built‐in electric field, the mixed dimensional 1D CdS nanowire/2D graphene van der Waals heterostructure shows strong electron–phonon coupling with the average intensity ratio of 2LO/1LO Raman mode is 1.2. Additionally, CdS nanowires are the typical polar semiconductor, the intensity of 2LO/1LO presents polarization dependence, and the maximum value can reach up to 8.95.

Mediating coherent acoustic phonon oscillation of 2D semiconductor/3D dielectric heterostructure by interfacial engineering

Mediating Coherent Acoustic Phonon Oscillation of a 2D Semiconductor/3d Dielectric Heterostructure by Interfacial Engineering

All-optical Generation,detection,and Manipulation of Picosecond Acoustic Pulses in 2D Semiconductor/dielectric Heterostructures

Terahertz phonon engineering with van der Waals heterostructures

Coherent Longitudinal Acoustic Phonon Approaching THz Frequency in Multilayer Molybdenum Disulphide.

Electrical manipulation of plasmon-phonon polaritons in heterostructures of graphene on biaxial crystals

Bidirectional phonon emission in two-dimensional heterostructures triggered by ultrafast charge transfer

Boosting Enhancement of the Electron–Phonon Coupling in Mixed Dimensional CdS/Graphene van der Waals Heterojunction

Coherent Coupling between Phonons, Magnons, and Photons

High-Efficiency Three-Wave and Four-Wave Phonon Mixing Via Electron-Mediated Nonlinearity in Semiconductor-Piezoelectric Heterostructures

Phonon-assisted electronic states modulation of few-layer PdSe2 at terahertz frequencies

Phonon-Assisted Ultrafast Charge Transfer at van der Waals Heterostructure Interface.

Phonon Lasing in a Hetero Optomechanical Crystal Cavity

Coherent acoustic phonons in a coupled hexagonal boron nitride–graphite heterostructure

High-temperature Phonon Coherence and Tunneling Effect in Semiconductor Superlattices

Dissipative coupling-induced phonon lasing

Engineering Acoustic Phonons and Electron-Phonon Coupling by the Nanoscale Interface

Advances in coherent coupling between magnons and acoustic phonons

Remarkable Reduction of Interfacial Thermal Resistance in Nanophononic Heterostructures

Tunable hybridized plasmon-phonon in graphene/mica-nanofilm heterostructure