Abstract:Neural networks based on low-power artificial synapses can significantly reduce energy consumption, which is of great importance in today's era of artificial intelligence. Two-dimensional (2D) material-based floating-gate transistors (FGTs) have emerged as compelling candidates for simulating artificial synapses owing to their multilevel and nonvolatile data storage capabilities. However, the low erasing/programming speed of FGTs renders them unsuitable for low-energy-consumption artificial synapses, thereby limiting their potential in high-energy-efficient neuromorphic computing. Here, we introduce a FGT-inspired MoS2/Trap/PZT heterostructure-based polarized tunneling transistor (PTT) with a simple fabrication process and significantly enhanced erasing/programming speed. Distinct from the FGT, the PTT lacks a tunnel layer, leading to a marked improvement in its erasing/programming speed. The PTT's highest erasing/programming (operation) speed can reach ∼20 ns, which outperforms the performance of most FGTs based on 2D heterostructures. Furthermore, the PTT has been utilized as an artificial synapse, and its weight-update energy consumption can be as low as 0.0002 femtojoule (fJ), which benefits from the PTT's ultrahigh operation speed. Additionally, PTT-based artificial synapses have been employed in constructing artificial neural network simulations, achieving facial-recognition accuracy (95%). This groundbreaking work makes it possible for fabricating future high-energy-efficient neuromorphic transistors utilizing 2D materials.

PZT-Enabled MoS 2 Floating Gate Transistors: Overcoming Boltzmann Tyranny and Achieving Ultralow Energy Consumption for High-Accuracy Neuromorphic Computing

PZT-Enabled MoS2 Floating Gate Transistors: Overcoming Boltzmann Tyranny and Achieving Ultralow Energy Consumption for High-Accuracy Neuromorphic Computing.

Polarized Tunneling Transistor for Ultralow-Energy-Consumption Artificial Synapse Toward Neuromorphic Computing.

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

Atomic Threshold-Switching Enabled MoS2 Transistors Towards Ultralow-Power Electronics

Dual-gate Manipulation of a HfZrOx-based MoS2 Field-Effect Transistor Towards Enhanced Neural Network Applications.

IGZO-based floating-gate synaptic transistors for neuromorphic computing

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Energy-efficient transistors: suppressing the subthreshold swing below the physical limit

A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications

A Low-Power Vertical Dual-Gate Neurotransistor with Short-Term Memory for High Energy-Efficient Neuromorphic Computing

Ultra‐Steep‐Slope High‐Gain MoS <sub>2</sub> Transistors with Atomic Threshold‐Switching Gate

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact

Ultralow-power optoelectronic synaptic transistors based on polyzwitterion dielectrics for in-sensor reservoir computing

All-2D-Materials Subthreshold-Free Field-Effect Transistor with Near-Ideal Switching Slope

Dual-gate IGZO-based Neuromorphic Transistors with Stacked Al2O3/Chitosan Gate Dielectrics

Freestanding multi-gate IZO-based neuromorphic transistors on composite electrolyte membranes

Oxide Neuromorphic Transistors Gated by Polyvinyl Alcohol Solid Electrolytes with Ultralow Power Consumption

Oxide Neuromorphic Transistors for Brain-like Computing

Gate-controlled neuromorphic functional transition in an electrochemical graphene transistor