Face‐to‐Face Growth of Wafer‐Scale 2D Semiconducting MOF Films on Dielectric Substrates

Youxing Liu,Yanan Wei,Minghui Liu,Yichao Bai,Xinyu Wang,Shengcong Shang,Changsheng Du,Wenqiang Gao,Jianyi Chen,Yunqi Liu
DOI: https://doi.org/10.1002/adma.202007741
IF: 29.4
2021-02-17
Advanced Materials
Abstract:<p>The preparation of large‐area 2D conductive metal–organic framework (MOF) films remains highly desirable but challenging. Here, inspired by the capillary phenomenon, a face‐to‐face confinement growth method to grow conductive 2D Cu<sub>2</sub>(TCPP) (TCPP = meso‐tetra(4‐carboxyphenyl)porphine) MOF films on dielectric substrates is developed. Trace amounts of solutions containing low‐concentration Cu<sup>2+</sup> and TCPP are pumped cyclically into a micropore interface to produce this growth. The crystal structures are confirmed with various characterization techniques, which include high‐resolution atomic force microscopy and cryogenic transmission electron microscopy (Cryo‐TEM). The Cu<sub>2</sub>(TCPP) MOF film exhibit an electrical conductivity of ≈0.007 S cm<sup>−1</sup>, which is approximately four orders of magnitude higher than other carboxylic‐acid‐based MOF materials (10<sup>−6</sup> S cm<sup>−1</sup>). Other wafer‐scale conductive MOF films such as M<sub>3</sub>(HHTP)<sub>2</sub> (M = Cu, Co, and Ni; HHTP = 2,3,6,7,10,11‐triphenylenehexol) can be produced utilizing this strategy and suggests this method has widescale applicability potential.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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