Doping Concentration Influenced Pyro‐Phototronic Effect in Self‐Powered Photodetector Based on Ga‐Incorporated ZnO Microwire/p + ‐GaN Heterojunction (Advanced Optical Materials 2/2022)

Peng Wan,Mingming Jiang,Tong Xu,Yang Liu,Xiaosheng Fang,Caixia Kan
DOI: https://doi.org/10.1002/adom.202270006
IF: 9
2022-01-01
Advanced Optical Materials
Abstract:The influence of the pyro‐phototronic effect on a self‐powered photodetector, composed of Ga‐incorporated ZnO microwire (ZnO:Ga MW) and p+‐GaN layer, was studied systematically by Mingming Jiang, Xiaosheng Fang, Caixia Kan, and co‐workers (see article number 2101851). Varying the Ga‐doping concentration in ZnO:Ga MWs, the pyroelectric current and photovoltaic current of photodetectors can be tuned, and the variation is attributed to the increased rate of photogenerated temperature and narrowed depletion layer.
materials science, multidisciplinary,optics
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