Abstract: The silicon-based electronic technology has made quite a great progress in the past five decades since the invention of the integrated circuit [1]. The advance is maintained primarily through the size scaling of the devices, i.e., metal-oxide-semiconductor field-effect transistor (MOSFET), which has resulted in many successive generations of devices with increased transistor performance and density. In case of the continual decrease for the device dimensions at a present speed, most of scientists forecast that the development of the integrated circuit will meet its physical and theoretical limit soon, perhaps in next decade [2–4]. To keep the device performance continuing to update, the seeking and preparation of new technologies is mandatory [5]. So far, two distinct routes have been taken to address that issue. One of them is to adopt the revolutionary technologies based on totally new concepts, e.g., two-terminal molecular devices [6], quantum computing [7], spintronics [8], and so on. However, these technologies will be incompatible with present application developed from silicon-based electronic industry. In the other case, attention is paid to a more evolutionary approach that is based on the well-established three terminal transistor concept, but utilizes alternative materials, specially single-walled carbon nanotubes (SWCNTs) that possess many unique advantages including onedimensional nanoscale structure as well as the excellent electrical and optical properties [5]. High-mobility, low-defect structure and intrinsic nanometer scale of carbon nanotubes (CNTs) have led to an intense research effort into the viability of utilizing carbon-nanotube field-effect transistors (CNTFETs) as a replacement for, or a complement to, future semiconductor devices [9–17].

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