Magnetoresistance and Kondo Effect in Nodal-Line Semimetal VAs2 *
Shuijin Chen,Zhefeng Lou,Yuxing Zhou,Qin Chen,Binjie Xu,Chunxiang Wu,Jianhua Du,Jinhu Yang,Hangdong Wang,Minghu Fang
DOI: https://doi.org/10.1088/0256-307x/38/1/017202
2021-01-01
Abstract:We performed calculations of the electronic band structure and the Fermi surface, measured the longitudinal resistivity ρxx (T,H), Hall resistivity ρxy (T,H), and magnetic susceptibility as a function of temperature at various magnetic fields for VAs2 with a monoclinic crystal structure. The band structure calculations show that VAs2 is a nodal-line semimetal when spin-orbit coupling is ignored. The emergence of a minimum at around 11 K in ρxx (T) measured at H = 0 demonstrates that some additional magnetic impurities (V4+, S = 1/2) exist in VAs2 single crystals, inducing Kondo scattering, evidenced by both the fitting of ρxx (T) data and the susceptibility measurements. It is found that a large positive magnetoresistance (MR) reaching 649% at 10 K and 9 T, its nearly quadratic field dependence, and a field-induced up-turn behavior of ρxx (T) also emerge in VAs2, although MR is not so large due to the existence of additional scattering compared with other topological nontrivial/trivial semimetals. The observed properties are attributed to a perfect charge-carrier compensation, which is evidenced by both the calculations relying on the Fermi surface and the Hall resistivity measurements. These results indicate that the compounds containing V (3d 3 4s 2) element can be as a platform for studying the influence of magnetic impurities to the topological properties.