Abstract:This review gives an overview of the recent progress in vacuum-based n-type transition metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding metal oxide TFTs in terms of fundamental electron structure, device process and reliability have been published. In particular, the required field-effect mobility of TMO TFTs has been increasing rapidly to meet the demands of the ultra-high-resolution, large panel size and three dimensional visual effects as a megatrend of flat panel displays, such as liquid crystal displays, organic light emitting diodes and flexible displays. In this regard, the effects of the TMO composition on the performance of the resulting oxide TFTs has been reviewed, and classified into binary, ternary and quaternary composition systems. In addition, the new strategic approaches including zinc oxynitride materials, double channel structures, and composite structures have been proposed recently, and were not covered in detail in previous review papers. Special attention is given to the advanced device architecture of TMO TFTs, such as back-channel-etch and self-aligned coplanar structure, which is a key technology because of their advantages including low cost fabrication, high driving speed and unwanted visual artifact-free high quality imaging. The integration process and related issues, such as etching, post treatment, low ohmic contact and Cu interconnection, required for realizing these advanced architectures are also discussed.

A Simple Scan Driver Circuit Suitable for Depletion-Mode Metal-Oxide Thin-Film Transistors in Active-Matrix Displays

P‐2: Narrow Bezel Gate Driver Generating Positive Pulse for AMOLED Display Using LTPO Technology with Depletion Mode Oxide TFTs

Adaptive frequency driving scan driver based on a‐InGaZnO TFTs for extremely low‐power displays

New Low-Voltage Driving Compensating Pixel Circuit Based on High-Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors for High-Resolution Portable Active-Matrix OLED Displays

A High-Reliability Scan Driver Integrated Circuit by MO TFTs for a Foldable Display

Highly Uniform Low Gray AMOLED Pixel Using Stable Circuit and Duty Ratio Modulation Driving

A low-power metal–oxide scan driver circuit outputting non-overlapping pulses with DC power-supplied buffer

A Scan Driver Including Light Emission Control Integrated by Metal-Oxide Thin-Film Transistors

A Low-Power Scan Driver Employing IZO TFTs Including an AC–DC Type Output Module

High-performance and Reliable Elevated-Metal Metal-Oxide Thin-Film Transistor for High-Resolution Displays

New Pixel Circuit Compensating Poly-si TFT Threshold-voltage Shift for Driving AMOLED

High-mobility Solution-Processed Tin Oxide Thin-Film Transistors with High-Κ Alumina Dielectric Working in Enhancement Mode.

MoS2-Thin Film Transistor Based Flexible 2T1C Driving Circuits for Active-Matrix Displays.

Review of Integrated Gate Driver Circuits in Active Matrix Thin-Film Transistor Display Panels

A compact gate driver with bifunctional capacitor for in-cell touch mobile display

A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode

Double-gate metal–oxide TFT pixel circuit for improved luminance uniformity of mobile OLED display

12.2: High Performance AMOLED Pixel Circuit Using Interleaved Emit Signals Based on Low‐Temperature Poly‐Si and Oxide (LTPO) TFTs

Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

30.2: Amorphous Silicon Thin‐Film Transistor Gate Driver Circuit Design with Time Division Driving Method for In‐Cell Touch Display Panel

A new four-transistor poly-Si pixel circuit for AMOLED