Double-layered hole transport material of CuInS2/Spiro for highly efficient and stable perovskite solar cells

Qing Zhou,Wenbo Ma,Zhenlong Zhang,Yuefeng Liu,Huafang Zhang,Yanli Mao
DOI: https://doi.org/10.1016/j.orgel.2021.106249
IF: 3.868
2021-09-01
Organic Electronics
Abstract:<p>In this paper, double-layered hole transport material (HTM) was designed and fabricated by adding a thin CuInS<sub>2</sub> film between perovskite and Spiro-OMeTAD (Spiro) layers. The power conversion efficiency (PCE) of the perovskite solar cells (PSCs) with double-layered HTM of CuInS<sub>2</sub>/Spiro was improved to 19.63% from 17.97% for the devices with pure Spiro. Moreover, the operational stability of the PSCs with double-layered HTM of CuInS<sub>2</sub>/Spiro was enhanced. The PCE of the PSCs with CuInS<sub>2</sub>/Spiro retains 91% of the initial value after 30 days storage in ambient atmosphere. The experimental results indicate that the improved performance could be come from the energy band match between CuInS<sub>2</sub> and Spiro, fast hole extraction and transport, and decreased charge recombination in the PSCs with double-layered HTM of CuInS<sub>2</sub>/Spiro. This work provides a promising prospect to design a low-cost and high stability HTM for commercial PSCs.</p>
materials science, multidisciplinary,physics, applied
What problem does this paper attempt to address?