Abstract:Abstract With the development of integrated circuit technology, especially after entering the sub-micron process, the reduction of critical dimensions and the realization of high-density devices, the flatness between integrated circuit material layers is becoming more and more critical. Because conventional mechanical polishing methods inevitably produce scratches of the same size as the device in metal or even dielectric layers, resulting in depth of field and focus problems in lithography. The first planarization technique to achieve application is spin on glass (SOG) technology. However, this technology will not only introduce new material layers, but will also fail to achieve the global flattening required by VLSI and ULSI technologies. Moreover, the process instability and uniformity during spin coating do not meet the high flatness requirements of the wafer surface. Also, while some techniques such as reverse etching and glass reflow can achieve submicron level regional planarization. After the critical dimension reaches 0.35 microns (sub-micron process), the above methods cannot meet the requirements of lithography and interconnect fabrication. In the 1980s, IBM first introduced the chemical mechanical polishing (CMP) technology used to manufacture precision optical instruments into its DRAM manufacturing [1]. With the development of technology nodes and critical dimensions, CMP technology has been widely used in the Front End Of Line (FEOL) and Back End Of Line (BEOL) processes [2]. Since the invention of chemical mechanical polishing, scientists have not stopped studying its internal mechanism. From the earliest Preston Formula (1927) to today’s wafer scale, chip scale, polishing pad contact, polishing pad - abrasive - wafer contact and material removal models, there are five different scale models from macro to the micro [3]. Many research methods, such as contact mechanics, multiphase flow kinetics, chemical reaction kinetics, molecular dynamics, etc., have been applied to explain the principles of chemical mechanical polishing to establish models. This paper mainly introduces and summarizes the different models of chemical mechanical polishing technology. The various application scenarios and advantages and dis-advantages of the model are discussed, and the development of modeling technology is introduced.

Chemical Mechanical Polishing Method and Practice

Chemical mechanical polishing: Theory and experiment

Chemical processes in the chemical mechanical polishing of copper

Copper chemical mechanical polishing using a slurry-free technique

Mechanism and Applications of Chemical and Mechanical Polishing

Mechanical aspects of the chemical mechanical polishing process: A review

Mechanisms of copper removal during chemical mechanical polishing

A Low Cost and Residue-Free Abrasive-Free Copper Cmp Process with Low Dishing, Erosion and Oxide Loss

Molecular Modeling of the Mechanical Effect in the Chemical Mechanical Polishing Process

Review on modeling and application of chemical mechanical polishing

Electro-chemical mechanical polishing of copper and chemical mechanical polishing of glass

Material Removal Mechanism of Copper CMP from a Chemical–Mechanical Synergy Perspective

Tribo-chemical Behavior of Copper in Chemical Mechanical Planarization

Recent developments and applications of chemical mechanical polishing

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Mechanisms of Chemically Promoted Material Removal Examined for Molybdenum and Copper CMP in Weakly Alkaline Citrate-Based Slurries

Electrochemical Corrosion Behavior and Theoretical Simulation of Cobalt in Chemical Mechanical Polishing Process

CMP Fill Synthesis: A Survey of Recent Studies

Progress in Material Removal Mechanisms of Surface Polishing with Ultra Precision

A new polishing method for complex structural parts: moist particle electrolyte electrochemical mechanical polishing (MPE-ECMP)

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies