Abstract:Metasurfaces have ushered in a huge development for their superior ability in controlling the light propagation by manipulating the phase, amplitude, and polarization, which are taken as potential alternatives for the refractive optical devices. In recent years, many applications of metasurface including metalens have been proposed and investigated, attracting strong interest for substituting their refractive counterparts. However, the conventional fabrication approaches of metalens employ electron‐beam lithography (EBL) followed by dry etching or atomic layer deposition (ALD) of dielectric materials, which are expensive and inefficient. Besides, dry etching of dielectric materials at sub‐100 nm scale with high aspect ratio is challenging. In this work, we present a new approach for dielectric metalens fabrication by combing the multilayer nanoimprint lithography and solution phase epitaxy of single crystal zinc oxide nanopillars array. We demonstrate high aspect‐ratio ZnO nanopillars with a height‐to‐diameter ratio of over 7:1. By using the multilayer nanoimprint lithography, we can obtain increased aspect‐ratio nanostructures from shallow imprinting molds. The solution phase epitaxy process enables a single crystal formation in a significantly cheap expense, and the highly anisotropic growth characteristic makes it possible for the nanopillars to be grown taller than the resist thickness, which is preferable for higher nanopillars growth. With this ability, we fabricate ZnO metalenses where the height of nanopillar reaches 1.1 um, while the focusing efficiency achieves 50% at target wavelength. The whole process is cost‐effective with a high throughput, which can be widely used for many optical applications and shows great potential for the mass production of dielectric metasurfaces. This article is protected by copyright. All rights reserved.

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