Dual-Gate Enhancement of the Sensitivity of miRNA Detection of a Solution-Gated Field-Effect Transistor Featuring a Graphene Oxide/Graphene Layered Structure
Chi-Hsien Huang,Wei-Ting Huang,Tzu-Ting Huang,Sian-Hong Ciou,Chang-Fu Kuo,Ao-Ho Hsieh,Yu-Sheng Hsiao,Yao-Jen Lee
DOI: https://doi.org/10.1021/acsaelm.1c00439
IF: 4.494
2021-09-28
ACS Applied Electronic Materials
Abstract:We prepared a solution-gated graphene transistor (SGGT) incorporating a graphene oxide/graphene (GO/G) layered structure as the active material for the sensitive and specific detection of miRNA without labeling. The GO/G layered structure was formed through atomic layer oxidation of bilayer graphene, where the top layer of graphene was exclusively oxidized, while the characteristics of the bottom layer of graphene were preserved. The top layer of GO served as a functionalized graphene for the covalent immobilization of DNA probe units on the surface of the active material, and the bottom layer of graphene served as a transducer, with the Dirac point in the transfer curve shifting during the detection of miRNA. We observed a good linear electrical response in the Dirac point shift toward miRNA-21 at concentrations in the range from 10 fM to 100 pM. The sensitivity of the GO/G-based SGGT having only one solution gate was 19.26 mV/decade; it greatly improved to 33.65 mV/decade when applying a dual gate due to the gate-controlled doping achieved by the back gate. The biosensor also demonstrated good selectivity for the detection of miRNA-21 over a four-base-mismatched miRNA and good specificity when measured in human serum albumin.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.1c00439.Materials characterizations, including Raman, XPS, UV–vis, CA, and electrical resistance, of GO/G and BLG (Figure S1); transfer curve and transconductance of the GO/G-based SGGT (Figure S2); carrier concentration of the GO/G at various concentrations of the target miRNA (Figure S3); transfer curves of the DNA probe–modified GO/G-based SGGT w/ v.s. w/o back gate voltage (Figure S4); transfer curves of the DNA probe–modified GO/G-based SGGT plotted with respect to the concentration of the four-base-mismatched miRNA in PBS and HAS (Figure S5) (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic