Abstract:This special issue consists of papers that are associated with invited lectures, workshop papers and hot topic papers presented at the 20th European Sectional Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG XX). This conference was organized in Novi Sad (Serbia) from 13 to 17 July 2010 by the Institute of Physics of the University of Belgrade. It is important to note that this is not a conference 'proceedings'. Following the initial selection process by the International Scientific Committee, all papers were submitted to the journal by the authors and have been fully peer reviewed to the standard required for publication in Plasma Sources Science and Technology (PSST). The papers are based on presentations given at the conference but are intended to be specialized technical papers covering all or part of the topic presented by the author during the meeting. The ESCAMPIG conference is a regular biennial Europhysics Conference of the European Physical Society focusing on collisional and radiative aspects of atomic and molecular physics in partially ionized gases as well as on plasma–surface interaction. The conference focuses on low-temperature plasma sciences in general and includes the following topics: Atomic and molecular processes in plasmas Transport phenomena, particle velocity distribution function Physical basis of plasma chemistry Plasma surface interaction (boundary layers, sheath, surface processes) Plasma diagnostics Plasma and discharges theory and simulation Self-organization in plasmas, dusty plasmas Upper atmospheric plasmas and space plasmas Low-pressure plasma sources High-pressure plasma sources Plasmas and gas flows Laser-produced plasmas During ESCAMPIG XX special sessions were dedicated to workshops on: Atomic and molecular collision data for plasma modeling, organized by Professors Z Lj Petrovic and N Mason Plasmas in medicine, organized by Dr N Puac and Professor G Fridman. The conference topics were represented in the program by 16 invited lectures, 7 selected hot topics, and 191 poster presentations. The largest number of contributed papers was submitted in Topic 5: Plasma diagnostics (37). The workshop topics were addressed by 10 invited lectures, 5 oral presentations and 7 posters. A post-conference workshop with 5 invited lectures was organized, dealing with the data needs for modeling of plasma sources of light. ESCAMPIG XX was attended by 185 scientists from 31 countries. Of the participants, 30% were PhD students (55). The list includes scientists from the USA, Japan, Australia, Mexico and other non-European countries, which indicates the truly international status of the conference. We would like to thank the authors for their efforts in preparing stimulating lectures and interesting articles for the readers of PSST, and the scientific community dealing with ionized gases, plasma sources and atomic, molecular and chemical physics of low-temperature plasmas for continued interest in the field of ESCAMPIG. We would like to thank the organizers of all previous ESCAMPIG conferences for setting the standards for organization and, in particular, the organizers of ESCAMPIG XVIII and XIX for their direct help and insight. Finally the International Scientific Committee and its chairman in particular have worked hard to select the best possible program and to keep us in line with almost 40 years of tradition and standards of the conference. Most importantly this has been the 20th conference. The quality of new papers shows maturity and new vistas in the field that has produced so much fundamental understanding of complex, non-equilibrium, even nonlinear plasmas. At the same time the field has led to some of the key technologies of modern civilization and has shown that responsible science that pays attention to its societal benefits should have no fear for its future. All critical issues studied today were presented at the meeting and only a small part is represented here. For example, discharges in liquids or above liquids were covered by several lectures represented by two papers. Verreycken et al [1] studied optical emission spectroscopy and Rayleigh scattering in discharges above water electrodes in order to measure gas temperature. At the same time Starikovsky et al [2] showed that it is possible to strike a breakdown directly in the liquid phase without gaseous evaporation or bubbles. Another key issue of present-day low-temperature plasma physics is atmospheric pressure discharges. Application of atmospheric pressure microwave plasma was considered by Belmonte et al [3] as a source for plasma-enhanced chemical vapour deposition. Strategies to produce nanosize structures and high deposition rates have also been proposed. Akishev et al [4] presented modeling results showing why spatial reproducibility of the origins of micro-discharges in a dielectric barrier discharge (DBD) is very high while the stochastic nature of the breakdown leads to jitter. Associated with the application of plasmas in many systems is control plasma chemistry. Tanarro and Herrero [5] performed measurements and modeling of dominant species in a hollow cathode discharge with variation of pressure. Dramatic changes in composition were noticed in H2, H2/Ar, and air. For example, NO becomes the second most abundant neutral under some conditions while at high mean energies H2+ ions become more abundant than H3+. Loureiro et al [6] presented the most detailed self-consistent model of discharges in N2, both pure and in mixtures with H2 and CH4. The model includes coupling of different mechanisms in the gas phase and on surfaces. A further example of detailed plasma chemistry and modeling of possible industrial applications is the work of De Bie et al [7] who studied the conversion of methane to more complex hydrocarbons and other gases in a detailed model of kinetic and plasma chemistry of a DBD reactor. Associated with plasma chemistry models but with a completely different final goal is the work of Taccogna et al [8]. They provide a detailed model of negative ion production in an ITER source of fast neutrals for heating of fusion plasma. Low-temperature plasmas have made their most significant impact through application of etching and other plasma techniques in the production of integrated circuits. Associated with this there have been several papers dealing with control of plasmas relevant for plasma etching applications. Czarnetzki et al [9] presented the modeling of an electrical asymmetry effect which allows independent control of plasma symmetry, bias and consequently properties of ions reaching the surfaces. Separate control of the flux and energy of ions from capacitively coupled plasmas, while an interesting fundamental issue, is also one of the key issues in the manufacture of integrated circuits. Makabe and Yagisawa [10] gave a detailed presentation of the top-down model of plasma devices for etching and other plasma-related nanotechnologies. Their paper presents a complex model covering atomic and molecular collisions and transport, plasma kinetics in complex geometries, and plasma interaction with surfaces with the ability to calculate the development of etched profiles, and the damage-inducing potentials within the wafer. Finally, as the basis of all modeling of plasmas, atomic and molecular collision and transport data were a much more prominent part of ESCAMPIG conferences in the past. We tried to initiate the return of elementary processes to ESCAMPIG from numerous specialized conferences by organizing a workshop on the data for modeling. Bartschat and Zatsarinny [11] gave a presentation of the foundation of the B-spline R-matrix method and a number of cross section results that extend the databases for plasma modeling of atomic gases. State-of-the-art calculations presented here focus on threshold regions of electronic excitation cross sections where complex structures exist due to resonances. These threshold regions of the excitation cross sections, however, determine the distribution function in the region of the ionization, The interface between plasma modeling and atomic physics is swarm studies, and those are based on transport theory that has recently become quite complex and versatile. Dujko et al [12] considered a Boltzmann equation solution to the transport of charged particles, especially in crossed electric and magnetic fields. Apart from indicating the necessity to include transport properties in E × B fields in plasma modeling, these results show complexity and kinetic phenomena that require kinetic models to be properly included. Finally, Makabe and Tatsumi [13] presented the structure of a comprehensive model of plasma etching devices and focused on the requirements for the atomic and collision cross section data. The winner of the W Crookes Prize was Zoltán Donkó [14] who gave a review of particle-in-cell and Monte Carlo simulation methods and presented a review of a large number of systems where he and his co-workers have applied this technique. In particular the lecture gives examples of different kinetic phenomena that arise in modeling of different plasmas. This presentation covers both applications in the control of low-pressure capacitively coupled plasmas and DC breakdown and glow discharges as well as the issues of modeling of elementary processes in the gas phase and on surfaces. Finally, to reply to Harold Pinter and his famous quote, apart from the known and the unknown there is the joy of extending the border of the 'known' and sharing it with colleagues at conferences like ESCAMPIG. Every answer that is reached opens new horizons and new realms of the 'unknown' to explore, and conferences like ESCAMPIG have proven to be a continuous source of ideas and inspiration for all colleagues within the field of low-temperature plasmas and elementary processes. We can certainly hope that the 20th ESCAMPIG was no exception in this regard. References Verreycken T, van Gessel A F H, Pageau A and Bruggeman P 2011 Plasma Sources Sci. Technol. 20 024002 Starikovsky A, Yang Y, Cho Y I and Fridman A 2011 Plasma Sources Sci. Technol. 20 024003 Belmonte T, Gries T, Cardoso R P, Arnoult R, Kosior F and Henrion G 2011 Plasma Sources Sci. Technol. 20 024004 Akishev Y, Aponin G, Balakirev A, Grushin M, Karalnik V, Petryakov A and Trushkin N 2011 Plasma Sources Sci. Technol. 20 024005 Tanarro I and Herrero V J 2011 Plasma Sources Sci. Technol. 20 024006 Loureiro J, Guerra V, Sá P A, Pintassilgo C D and Lino da Silva M 2011 Plasma Sources Sci. Technol. 20 024007 De Bie C, Martens T, van Dijk, Paulussen S, Verheyde B and Bogaerts A 2011 Plasma Sources Sci. Technol. 20 024008 Taccogna F, Minelli P, Diomede P, Longo S, Capitelli M and Schneider R 2011 Plasma Sources Sci. Technol. 20 024009 Czarnetzki U, Schulze J, Schungel E and Donkó Z 2011 Plasma Sources Sci. Technol. 20 024010 Makabe T and Yagisawa T 2011 Plasma Sources Sci. Technol. 20 024011 Bartschat K and Zatsarinny O 2011 Plasma Sources Sci. Technol. 20 024012 Dujko S, White R D, Petrovic Z Lj and Robson R E 2011 Plasma Sources Sci. Technol. 20 024013 Makabe T and Tatsumi T 2011 Plasma Sources Sci. Technol. 20 024014 Donkó Z 2011 Plasma Sources Sci. Technol. 20 024001

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