Enhanced Dielectric Properties and Band Gap Expansion in NiO Submicron Powders via Substitutional Be Doping

Dongpyo Hong,Gyung Hyun Kim,Eun Jung Lee,Young Il Moon,Ok Sung Jeon,Se Hun Lee,Sang-Hwa Lee,Young Jun Yoo,Sang Yoon Park
DOI: https://doi.org/10.1088/2053-1591/ad95e4
IF: 2.025
2024-11-28
Materials Research Express
Abstract:The fundamental tradeoff has made it difficult to enhance the low permittivity of wide bandgap semiconductors without sacrificing the bandgap. In this work we demonstrate that high-concentration substitutional Be doping can enhance NiO's dielectric properties and simultaneously widen the bandgap. Up to 5 at% of Ni in NiO could be substituted by Be while maintaining the rocksalt crystalline structure. The real part of permittivity at low frequencies was found to be significantly increases (40%) while bandgap also increases from 3.06 to 3.37. These findings offer engineering insights for developing high-K wide bandgap materials, essential for various electronic and optoelectronic applications.
materials science, multidisciplinary
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