Abstract:One of the most appealing aspects of the two-dimensional transition-metal dichalcogenides (2D-TMDs) is that they have a variety of crystal types, which can exist in three different atomic lattices, 2H, 1 T and 1 T', and can therefore exhibit diverse electronic properties. In addition, 2D-TMD heterostructures with distinctive features can be generated by combining two monolayers either vertically or laterally (in-plane). In this work, we used first-principles calculations to explore the structural and electronic properties of the H-phase MoTe2 monolayer, the T'-phase WTe2 monolayer, and their in-plane heterostructures (H-MoTe2/T'-WTe2). The H-phase MoTe2 monolayer has a band structure with a direct band gap, whereas the 1 T'-WTe2 monolayer is projected to be a Weyl semimetal based on our findings. We constructed a series of five relatively stable in-plane H-MoTe2/T'-WTe2 heterostructures with metal–semiconductor and studied their electronic properties. The band structures of these in-plane heterostructures were shown to be strongly related to the relative orientations of the monolayers at the interface. In particular, the band gaps of the heterostructures joined along the armchair direction were found to be smaller than 0.1 eV. By sewing the MoTe2 and WTe2 monolayers along the zigzag direction, two relatively stable structures were created, with according to the band structure analysis, exhibited metallic characteristics. Surprisingly, band inversion appeared near the Fermi level due to boundary effects. Therefore, topological properties may be present in such in-plane heterostructures. Moreover, some of these in-plane H-MoTe2/T'-WTe2 heterostructures have effective Schottky barrier heights smaller than 0.25 eV for holes, and could thus be used to construct field effect transistors (FETs). We also found that the effective Schottky barrier height was largely determined by the interfacial bonding environment, the external electric field, and uniaxial strains. Our findings enrich the diversity of the 2D-TMDs heterostructures and point to a viable approach for the design of high-performance electronic and optoelectronic devices.

Manipulating Interfacial Thermal Conduction of 2D Janus Heterostructure via a Thermo‐Mechanical Coupling

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Strong interfacial interactions induced a large reduction in lateral thermal conductivity of transition-metal dichalcogenide superlattices

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

In-plane interfacing effects of two-dimensional transition-metal dichalcogenide heterostructures

Interfacial properties of In-plane monolayer 2H-MoTe2/1T'-WTe2 heterostructures

Spectroscopic Signatures of Interlayer Coupling in Janus MoSSe/MoS2 Heterostructures

One Stone Two Birds: Anomalously Enhancing the Cross-Plane and In-Plane Heat Transfer in 2D/3D Heterostructures by Defects Engineering

Hidden phonon highways promote photoinduced interlayer energy transfer in twisted transition metal dichalcogenide heterostructures

Toward Optimal Heat Transfer of 2D–3D Heterostructures via van der Waals Binding Effects

Thermal Conductivity of MoS2/MoSe2 Heterostructures: the Role of Lattice Mismatch, Interlayer Rotation and Species Intermixing

Theoretical investigations of Janus WSeTe monolayer and related van der Waals heterostructures with promising thermoelectric performance

Intriguing electronic and optical properties of two-dimensional Janus transition metal dichalcogenides.

In-Plane and Interfacial Thermal Conduction of Two-Dimensional Transition-Metal Dichalcogenides

In Situ Exploration of the Thermodynamic Evolution Properties in the Type II Interface from the WSe2–WS2 Lateral Heterojunction

Theoretical Analysis of a Two-Dimensional Metallic/Semiconducting Transition-Metal Dichalcogenide NbS2//WSe2 Hybrid Interface

Phonon Thermal Properties of Transition-Metal Dichalcogenides MoS2 and MoSe2 Heterostructure

Excellent Thermoelectric Performance Induced by Interface Effect in MoS2/MoSe2 Van Der Waals Heterostructure

Temperature-Dependent Two-Dimensional Transition Metal Dichalcogenide Heterostructures: Controlled Synthesis and Their Properties

Twist-assisted optoelectronic phase control in two-dimensional (2D) Janus heterostructures