Abstract:The electronic and nuclear spin degrees of freedom for donor impurities in semiconductors form ultra coherent two-level systems that are useful for quantum information applications. Spins naturally have magnetic dipoles, so alternating current (AC) magnetic fields are frequently used to drive spin transitions and perform quantum gates. These fields can be difficult to spatially confine to single donor qubits so alternative methods of control such as AC electric field driven spin resonance are desirable. However, donor spin qubits do not have electric dipole moments so that they can not normally be driven by electric fields. In this work we challenge that notion by demonstrating a new, all-electric-field method for controlling neutral $^{31}$P and $^{75}$As donor nuclear spins in silicon through modulation of their donor-bound electrons. This method has major advantages over magnetic field control since electric fields are easy to confine at the nanoscale. This leads to lower power requirements, higher qubit densities, and faster gate times. We also show that this form of control allows for driving nuclear spin qubits at either their resonance frequency or the first subharmonic of that frequency, thus reducing device bandwidth requirements. Interestingly, as we relax the bandwidth requirements, we demonstrate that the computational Hilbert space is expanded to include double quantum transitions, making it feasible to use all four nuclear spin states to implement nuclear-spin-based qudits in Si:As. Based on these results, one can envision novel high-density, low-power quantum computing architectures using nuclear spins in silicon.

High-fidelity readout and control of a nuclear spin qubit in silicon

High-Fidelity Optical Readout of a Nuclear-Spin Qubit in Silicon Carbide

High fidelity optical readout of a nuclear spin qubit in Silicon Carbide

High fidelity state preparation, quantum control, and readout of an isotopically enriched silicon spin qubit

Single-Shot Readout of a Nuclear Spin in Silicon Carbide

Qudit-Based Spectroscopy for Measurement and Control of Nuclear-Spin Qubits in Silicon Carbide

Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout

Storing quantum information for 30 seconds in a nanoelectronic device

Measuring nuclear spin qubits by qudit-enhanced spectroscopy in Silicon Carbide

Optical single-shot readout of spin qubits in silicon

Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot

Entanglement and control of single nuclear spins in isotopically engineered silicon carbide

Rapid single-shot parity spin readout in a silicon double quantum dot with fidelity exceeding 99%

Rapid single-shot parity spin readout in a silicon double quantum dot with fidelity exceeding 99 %

High-fidelity initialization and control of electron and nuclear spins in a four-qubit register

Precision tomography of a three-qubit donor quantum processor in silicon

High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

A fault-tolerant addressable spin qubit in a natural silicon quantum dot

High-fidelity single-shot readout of single electron spin in diamond with spin-to-charge conversion

Electrically driving nuclear spin qubits with microwave photonic bangap resonators