Abstract:The solution casting process was used to fabricate nanocomposite samples composed of carboxymethylcellulose (CMC), polyvinyl alcohol (PVA), poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and filled with varied concentrations of nickel oxide nanoparticles (NiO NPs). The effect of NiO nanoparticles on the structural, optical, and electrical properties of the pure CMC/PVA/PEDOT:PSS mixture was studied and discussed. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis revealed that the NiO NPs are cubic in phase and range in size from 10 to 55 nm. The XRD analysis of the incorporated films indicated that the NiO NPs crystallinity increased at expense of the CMC/PVA/PEDOT:PSS composites. Fourier Transform Infrared (FTIR) examination revealed the main absorption vibrational peaks of CMC, PVA, PEDOT:PSS, and Ni-O, whose intensities changed randomly after filling, revealing the intermolecular interaction between the nanocomposite components. The UV and visible range absorption spectra showed a sharp peak around 228 for the pure blend, which can be assigned to the π→π* transition. After being filled with NiO NPs, the nanocomposites produced displayed new peaks at 292 and 422 nm that steadily increased with increasing NiO NPs concentration. The optical energy gap (Eg) was computed, and it was discovered that when the NiO NPs content increased, the Eg decreased (from 4.88 to 4.06 eV). At room temperature and over a wide frequency range, between 10 − 1 and 10 7 Hz, the samples' impedance, AC conductivity, and dielectric qualities were examined. Increased NiO NPs content was seen to gradually enhance dielectric loss (up to 2255), and dielectric constant (up to 311). The AC conductivity of the filled samples is also enhanced and corresponds to Jonscher power law. By analysing impedance components of the Z * , the equivalent electrical circuit for each sample was determined. Because of the considerable improvement in optical and electrical properties, these composite films could compete for usage in optoelectronic applications.

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