Surface Engineering of Nanoporous Silicon Photocathodes for Enhanced Photoelectrochemical Hydrogen Production
Jing-Xin Jian,Ming-Ming Yao,Jia-Xin Liao,Mu-Han Zhou,Yi-Jing Chen,Meng-Xin Deng,Yu-Mei Huang,Qing-Xiao Tong,Chaoping Liu
DOI: https://doi.org/10.1039/d2cy00830k
2022-07-31
Abstract:Silicon (Si) is a promising semiconductor material in photoelectrochemical (PEC) H2 evolution due to its advantages of Earth-abundant element, non-toxicity, broad absorption of the solar spectrum, high saturated-current and industrial fabrication. However, shortcomings of strong sunlight reflection, low photocurrent onset potential, slow charge-transfer dynamics at the silicon/electrolyte interface, and low stability in electrolyte limit its PEC applications. In this work, surface-engineered nanoporous Si photocathodes with controllable surface morphologies are fabricated. Compared with the flat Si (f-Si), chemical-etched Si (c-Si) and electrochemical-etched Si (ec-Si), the PEC-etched Si (pec-Si) exhibits high light-harvesting efficiency, large surface area and improved electron-transfer advantages, resulting in dramatically enhanced PEC water splitting. Additionally, n-type TiO2 is deposited on the Si surface to prepare p-n heterojunction and a protective layer, which further increases the charge separation and water splitting stability. Under AM1.5G illumination, the optimized pec-Si/TiO2 photocathode gives a high photocurrent density of -15.53 mA cm-2 at 0 VRHE, a large onset potential of 0.60 VRHE, and a high applied bias photon-to-current efficiency of 2.22% for H2 production. The surface engineering of nanoporous structure and p-n heterojunction brings insights into the construction of efficient photoelectrode for solar conversion.
chemistry, physical