Enhancing optical properties in sulphamic acid single crystals through caesium doping for advanced NLO applications

G. Sudhakar,D. Rajan Babu
DOI: https://doi.org/10.1007/s11082-024-07748-y
IF: 3
2024-10-27
Optical and Quantum Electronics
Abstract:Sulphamic acid yielded bulk single crystals (pure and Cs doped SA) through a conventional growth process at 30°C. Doping with Cs: SA significantly impacted the material's structure, as evidenced by stronger XRD peaks indicating enhanced crystallinity and FT-IR spectra showing characteristic peak broadening and intensity variations that confirm dopant incorporation into the SA lattice. From the EDAX analysis the presence of Cs ions in the SA lattice. The effect of Cs: SA doping on the optical properties of the crystals was investigated by calculating their absorbance and band gap. The grown crystal's Meyer's index value indicates that it belongs to the soft material group. Dielectric investigations were carried out to comprehend the diverse polarisation mechanisms at various temperatures. It is clear from the thermal investigation that the crystal dissociates. Doping Cs: SA crystals significantly increased their third-order susceptibility, indicating enhanced nonlinear optical (NLO) properties.
engineering, electrical & electronic,optics,quantum science & technology
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