Spin-polarized current in wide bandgap hexagonal boron nitrides containing 4|8 line defects

Xinxin Jiang,Xi Zuo,Li Han,Heming Li,Quan Gao,Xiaoteng Li,Xingwen Zheng,Xiaohui Jiang,Bin Cui,Dongmei Li,De-sheng Liu,Fanyao Qu

DOI: https://doi.org/10.1016/j.commatsci.2020.109799

IF: 3.572

2020-10-01

Computational Materials Science

Abstract:<p>Line defects (LDs) which are commonly present in two-dimensional materials play an important role in spintronic applications for generating and transporting spin current. We theoretically predict of the electronic and magnetic properties of <em>n</em>-type doped monolayers of hexagonal boron nitride (<em>h</em>-BN) with 4|8 LDs. The LDs can create two deep narrow bands in the band gap of the <em>h</em>-BN sheet with an energy separation about 2.75 eV at Γ point. Interestingly, at a certain concentration of electrons introduced by <em>n</em>-type doping, a tantalizing spontaneous one-dimensional ferromagnetic ordering emerges due to the partially-occupied narrow conduction band. Moreover, it is found that this electron doping induced spin polarization (of charge current) is up to 90% in the bias voltage range from 0.1 V to 0.4 V. Our findings indicate that the <em>h-</em>BN monolayer can functionalize a semiconductor for spintronic devices applications, which is beyond a common sense of <em>h-</em>BN tunneling barrier.</p>

materials science, multidisciplinary