Abstract:Two-dimensional (2D) monolayer phosphorene, a 2D system with quasi-one-dimensional (quasi-1D) excitons, provides a unique 2D platform for investigating the dynamics of excitons in reduced dimensions and fundamental many-body interactions. However, on the other hand, the quasi-1D excitonic nature can limit the luminescence quantum yield significantly. Here, we report exciton brightening in monolayer phosphorene achieved via the dimensionality modification of excitons from quasi-1D to zero-dimensional (0D), through the transference of monolayer phosphorene samples onto defect-rich oxide substrate deposited by plasma-enhanced chemical vapor deposition (PECVD). The resultant interfacial luminescent local states lead to exciton localization and trigger efficient photon emissions at a new wavelength of ~920 nm. The luminescence quantum yield of 0D-like localized excitons is measured to be at least 33.6 times larger than that of intrinsic quasi-1D free excitons in monolayer phosphorene. This is primarily due to the reduction of non-radiative decay rate and the possibly enhanced radiative recombination probability. Owing to the large trapping energy, this new photon emission from the localized excitons in monolayer phosphorene can be observed at elevated temperature, which contrasts markedly with defect-induced photon emission from transition metal dichalcogenide (TMD) semiconductor monolayers that can only be observed at cryogenic temperatures. Our findings introduce new avenues for the development of novel photonic devices based on monolayer phosphorene, such as near-infrared lighting devices that are operable at elevated temperature. More importantly, 2D phosphorene with quasi-1D free excitons and 0D-like localized excitons provides a unique platform to investigate the fundamental phenomena in the ideal 2D-1D-0D hybrid system.

Robust and Enhanced Short-Wave Near-Infrared Light Emission in Phosphorene through Photon-Activated Oxidation

Near-infrared Emission from Defect States in Few-layer Phosphorene

From Black Phosphorus to Phosphorene: Basic Solvent Exfoliation, Evolution of Raman Scattering, and Applications to Ultrafast Photonics

Optical Signatures of Phosphorene Chemical Evolvement in Liquid Environment

Efficient near-infrared luminescence in LiInO2:Cr3+ phosphor for light-emitting-diodes

Extraordinary Photoluminescence and Strong Temperature/Angle-Dependent Raman Responses in Few-Layer Phosphorene

Exciton Brightening in Monolayer Phosphorene via Dimensionality Modification

Phosphorene: Synthesis, Scale-Up, and Quantitative Optical Spectroscopy

Phosphorene: Fabrication, Properties and Applications

Direct Observation of the Layer-Dependent Electronic Structure in Phosphorene.

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Toward an Ultrahigh-Performance Near-Infrared Photoresponsive Field-Effect Transistor Using a Lead Phthalocyanine/MoS 2 Organic–Inorganic Planar Heterojunction

Ultrabroad Near Infrared Emitting Perovskites

Ultra-broadband near infrared phosphor with wide spectral range and long peak wavelength achieved by double-site occupation

Actively variable-spectrum optoelectronics with black phosphorus

Research Progress of the Preparation, Properties and Application of Phosphorene

Synergistic effect of dual-site occupation and activators confinement realizing an efficient ultra-broadband NIR emitter

Phosphorene Oxide: Stability and electronic properties of a novel 2D material

Broadband Near‐Infrared Garnet Phosphors with Near‐Unity Internal Quantum Efficiency

Near-infrared Light Emitting Devices from Er Doped Silica Thin Films Via Introducing SnO2 Nanocrystals

[Standards, Options, and Recommendations: a space in Bulletin du Cancer to facilitate their dissemination].