Theoretical design of active Ga 2 O 3 monolayer-based catalysts for electrocatalytic HER

Rongzhi Wang,Jin-Cheng Zheng
DOI: https://doi.org/10.1039/d4cp03007a
IF: 3.3
2024-10-15
Physical Chemistry Chemical Physics
Abstract:Electrocatalytic hydrogen evolution reaction (HER) offers a sustainable and clean route for hydrogen production. Developing high-efficiency HER catalyst is extremely essential to meet future needs. Herein, Sn doped Ga 2 O 3 monolayer, O defected Ga 2 O 3 monolayer and Ru adsorbed Ga 2 O 3 monolayer with high electrocatalytic performances (the H adsorption free energies of them are 0.169, 0.126 and 0.065 eV successively) toward HER are reported. Sn doped Ga 2 O 3 monolayer follows Volmer-Heyrovsky mechanism, O defected Ga 2 O 3 monolayer and Ru adsorbed Ga 2 O 3 monolayer are suitable for Volmer-Tafel mechanisms. The strain from -4% to 4% in X or Y direction could linearly modulate the HER activities of Sn doped Ga 2 O 3 monolayer and O defected Ga 2 O 3 monolayer. Sn doped Ga 2 O 3 monolayer, O defected Ga 2 O 3 monolayer and Ru adsorbed Ga 2 O 3 monolayer only manifest high HER catalytic activities in the strong acidic media. These phenomenons can provide a rational approach to enhance the HER activity for Ga 2 O 3 monolayer based materials.
chemistry, physical,physics, atomic, molecular & chemical
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