Abstract:Colloidal quantum dots (CQDs) are promising materials for flexible electronics, light sensing and energy conversion. In particular, as a narrow bandgap semiconductor, lead selenide (PbSe) CQDs have attracted considerable interest due to their potential applications in infrared (IR) optoelectronics such as IR light-emitting diodes (LEDs), photodetectors and solar cells. Solution-processed photodetectors are more attractive owing to their flexible, large-scale and low-cost fabrication, and their performance depends greatly on the film quality and surface morphology. In this study, a high performance solution-processed infrared photodetector based on PbSe CQDs blended with low hole mobility polymer poly(N-vinylcarbazole) (PVK) is presented. In order to obtain a higher device performance, different volume ratios (K = V-PVK/V-PbSe) of PVK (20 mg ml(-1) in chloroform) in PbSe CQDs (15 mg ml(-1) in chlorobenzene) were investigated, and a maximum responsivity and specific detectivity of 2.93 A W-1 and 1.24 x 10(12) jones, respectively, were obtained at V-G = -20 V under 30 mW cm(-2) 980 nm laser illumination for field-effect transistor (FET)-based photodetector Au(S&D)/PbSe : PVK/PMMA/Al(G), in which PbSe : PVK nanocomposite with K = 1 : 2 acts as the active layer and poly (methyl methacrylate) (PMMA) as the dielectric layer. The reasons for the high device performance of PbSe : PVK nanocomposite as an active layer are discussed, in which PbSe nanoparticles were blended with low hole mobility polymer PVK but showed comparable detectivity as that blended with regioregular P3HT. Moreover, all these types of photodetectors are very stable for reverse fabrication using PMMA dielectric layer to shield the active layer from the environment and by inorganic ligand exchange treatment on the active layer.

Mid-Infrared Intraband Photodetector via High Carrier Mobility HgSe Colloidal Quantum Dots

High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors

Heterojunctions of Mercury Selenide Quantum Dots and Halide Perovskites with High Lattice Matching and Their Photodetection Properties

Mid-infrared HgTe/As2S3 field effect transistors and photodetectors

Midwavelength Infrared p-n Heterojunction Diodes Based on Intraband Colloidal Quantum Dots

Ligand-Engineered HgTe Colloidal Quantum Dot Solids for Infrared Photodetectors

Mid- and Long-Wave Infrared Optoelectronics via Intraband Transitions in PbS Colloidal Quantum Dots

High Performance Solution-Processed Infrared Photodetector Based On Pbse Quantum Dots Doped With Low Carrier Mobility Polymer Poly(N-Vinylcarbazole)

High-operating-temperature mid-infrared photodetectors via quantum dot gradient homojunction

Dedoping of Intraband Silver Selenide Colloidal Quantum Dots through Strong Electronic Coupling at Organic/Inorganic Hybrid Interfaces

Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots

Bi 2 S 3 Electron Transport Layer Incorporation for High-Performance Heterostructure HgTe Colloidal Quantum Dot Infrared Photodetectors

A colloidal quantum dot infrared photodetector and its use for intraband detection

Bi2S3Electron Transport Layer Incorporation for High-Performance Heterostructure HgTe Colloidal Quantum Dot Infrared Photodetectors

In-Synthesis Se-Stabilization Enables Defect and Doping Engineering of HgTe Colloidal Quantum Dots

Enhancing detectivity in mid-infrared photodetectors through structural parameter engineering in HgSe-HgTe colloidal quantum dots

Ultralow Dark Current Infrared Photodetector Based on SnTe Quantum Dots Beyond 2 Μm at Room Temperature.

Thermally stable high carrier mobility nanocomposite infrared photodetector

Carrier Recirculation Induced High-Gain Photodetector Based on van der Waals Heterojunction

Synthesis of HgTe Colloidal Quantum Dots for Infrared Photodetector

Mid-Infrared HgTe Colloidal Quantum Dots In-Situ Passivated by Iodide