Approaching The External Quantum Efficiency Limit in two‐Dimensional Photovoltaic Devices

Haoyun Wang,Wei Wang,Yongle Zhong,Dongyan Li,Zexin Li,Xiang Xu,Xingyu Song,Yunxin Chen,Pu Huang,Anyi Mei,Hongwei Han,Tianyou Zhai,Xing Zhou
DOI: https://doi.org/10.1002/adma.202206122
IF: 29.4
2022-08-14
Advanced Materials
Abstract:Two‐dimensional (2D) transition metal dichalcogenides (TMDs) are promising candidates for realizing ultrathin and high‐performance photovoltaic devices. However, the external quantum efficiency (EQE) and power conversion efficiency (PCE) of most 2D photovoltaic devices face great challenge in exceeding 50% and 3% due to the low efficiency of photo‐carrier separation and collection. Here, we demonstrate photovoltaic devices with defect‐free interface and recombination‐free channel based on 2D WS2, showing high EQE of 92% approaching the theoretical limit and high PCE of 5.0%. The high performances are attributed to the van der Waals (vdW) metal contact without interface defects and Fermi‐level pinning, and the fully depleted channel without photo‐carrier recombination, leading to intrinsic photo‐carrier separation and collection with high efficiency. Furthermore, we demonstrate that our strategy can be extended to other TMDs such as MoSe2 and WSe2 with EQE of 92% and 94%, respectively. This work proposes a universal strategy for building high‐performance 2D photovoltaic devices. The nearly‐ideal EQE provides great potential for PCE approaching the S‐Q limit. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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