Abstract:The enhancement of electron–phonon interaction provides a reasonable explanation for gate-tunable phonon properties in some semiconductors where multiple inequivalent valleys are simultaneously occupied upon charge doping, especially in few-layer transition metal dichalcogenides (TMDs). In this work, we report var der Waals epitaxy of 2H-MoSe2 by molecular beam epitaxy (MBE) and gate-tunable phonon properties in monolayer and bilayer MoSe2. In monolayer MoSe2, we find that out-of-plane phonon mode A1g exhibits a strong softening and shifting toward lower wavenumbers at a high electron doping level, while in-plane phonon mode E2g1 remains unchanged. The softening and shifting of the out-of-plane phonon mode could be attributed to the increase of electron–phonon interaction and the simultaneous occupation of electrons in multiple inequivalent valleys. In bilayer MoSe2, no corresponding changes of phonon modes are detected at the same doping level, which could originate from the occupation of electrons only in single valleys upon high electron doping. This study demonstrates electrostatically enhanced electron–phonon interaction in monolayer MoSe2 and clarifies the relevance between occupation of multiple valleys and phonon properties by comparing Raman spectra of monolayer and bilayer MoSe2 at different doping levels.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c12748?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c12748</a>.Reflection high-energy electron diffraction (RHEED) patterns as a function of growth time during MoSe2 growth on HOPG; atomic force microscopy (AFM) of MoSe2 under different growth temperatures; air stability measurements of MoSe2 films; and Raman spectra of five-layer MoSe2 under doping (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c12748/suppl_file/am0c12748_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

The in-plane structure domain size of nm-thick MoSe 2 uncovered by low-momentum phonon scattering

The in-plane structure domain size of nm-thick MoSe<sub>2</sub> uncovered by low-momentum phonon scattering

First-principles Study of the Phonon Vibrational Spectra and Thermal Properties of Hexagonal MoS2

Coherent Longitudinal Acoustic Phonon Approaching THz Frequency in Multilayer Molybdenum Disulphide.

Phonon dispersion of MoS$_2$

Low-Frequency Raman Modes and Electronic Excitations In Atomically Thin MoS2 Crystals

Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2

Electrostatically Enhanced Electron–Phonon Interaction in Monolayer 2H-MoSe 2 Grown by Molecular Beam Epitaxy

Interlayer Breathing and Shear Modes in NbSe2 Atomic Layers

Resolving Deep Quantum-Well States in Atomically Thin 2H-Mote2 Flakes by Nanospot Angle-Resolved Photoemission Spectroscopy

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

Observation of Low-Frequency Raman Modes and Electronic Excitations in Atomically Thin MoS$_{2}$ Crystals

Resonance Raman Scattering in Bulk 2 HMX 2 ( M = Mo , W ; X = S , Se ) and Monolayer MoS 2

Low-Frequency Raman Modes And Electronic Excitations In Atomically Thin Mos2 Films

Nonmonotonic thickness-dependence of in-plane thermal conductivity of few-layered MoS 2 : 2.4 to 37.8 nm.

Molecular-beam epitaxy of monolayer MoSe<sub>2</sub>: growth characteristics and domain boundary formation

Moiré phonons in twisted MoSe 2 –WSe 2 heterobilayers and their correlation with interlayer excitons

Phonon transport of Janus monolayer MoSSe: a first-principles study

Abnormally weak intervalley electron scattering in MoS2 monolayer: insights from the matching between electron and phonon bands

Moiré Phonons in Twisted MoSe2–WSe2 Heterobilayers and Their Correlation with Interlayer Excitons