Abstract:This study investigates the formation of facets on Si surface under Xe ion irradiation using an ion energy of 0.5 keV. By examining the effects of ion incidence angle (60°- 85°), fluence (4.5 × 10 18 to 1.35 × 10 19 ions/cm 2 ), and temperature (RT to 200 ◦ C), we explore the evolution of facets. The surface roughness displays a distinct trend, reaching its peak when the ion incidence angle is 80°, which indicates the formation of faceted structures due to a sudden change in roughness. Additionally, temperature studies highlight the important role of temperature in enhancing facet arrangement. To support experimental findings, numerical simulation using Anisotropic Kuramoto-Sivashinsky (AKS) equation is employed. These simulations provide valuable insights into the dynamics of facet evolution, allowing us to better understand how curvature-dependent sputtering yield, dispersion, and diffusion collectively influence the formation and morphology of facets on the Si surface under Xe ion irradiation.

Investigation of facet evolution on Si surfaces bombarded with Xe ions