Analysis of energy bands and density of states of CuFe(SxSeyTe1-x-y)2 by calculating
Bo Li,Ruiting Yu,Jinglun Sun,Peng Zhao,Rongxun Piao
DOI: https://doi.org/10.1080/00150193.2024.2320570
2024-11-18
Ferroelectrics
Abstract:Copper based sulfur compounds have excellent optoelectronic properties which can be regulated through chemical doping, and are the candidate materials for solar cells, photocatalysis and other fields. The crystal models of CuFe(S x Se y Te 1-x-y ) 2 (x = 0.125,0.25,0.25,0.5; y = 0.125,0.25,0.5,0.25) are established, and the energy bands and density of states of CuFe(S x Se y Te 1-x-y ) 2 are calculated using first principles. The analysis results show that as the doping of S atoms increases, the lattice constants a and b gradually increase, while the lattice constants c and cell volume V become smaller and smaller; As the doping of Se atoms increases, the lattice constants a and b gradually increase, while the lattice constant c and cell volume V become smaller and smaller. The valence band top and conduction band bottom of CuFe(S x Se y Te 1-x-y ) 2 (x = 0.125,0.25,0.25,0.5; y = 0.125,0.25,0.5,0.25) are at the same point G. It can be explained that CuFe(S x Se y Te 1-x-y ) 2 is a direct bandgap semiconductor, and the bandgap widths of the selected crystal structures corresponding to the values of x and y are approximately 0.98, 0.97, 0.91 and 0.98 eV, respectively. The diagram for the density of states has peaks on both sides of the Fermi level, and other peaks in the density of states figure also correspond to the band graph. The size and trend of the peaks reflect the strength of electron delocalization.
materials science, multidisciplinary,physics, condensed matter