Abstract:The photodetector with MAPbI3:MA3Bi2I9 perovskite bulk heterojunction as the light‐absorbing layer and hexyltrimethylammonium bromide (HTAB) as the barrier layer is prepared. Under the synergistic effect of the external electric field and barrier layer, the tunneling probability of the MAPbI3 photogenerated carriers in the bulk heterojunction can be effectively regulated to confer the photodetector band‐selective function. Photodetectors (PDs) with band selection functions are highly desirable for the future complex environment. Currently, band‐selective PDs are typically realized by integrating various optical filters with broadband PDs or constructing heterojunction with multi‐photo‐absorbing layers. However, these methods cause increased manufacturing costs and device integration complexity. Here, a novel solution‐processed perovskite bulk heterojunction (BHJ) layer (MAPbI3:MA3Bi2I9) is developed as photo‐absorbing layer, and an effective interface engineering is proposed to selectively shield photo‐generated carriers in the BHJ. By regulating the bias voltage, the tunneling probability of photo‐generated carrier of MAPbI3 in the BHJ layer can be easily controlled, enabling band‐selective capability. The PD exhibits a superior photo‐response in the visible and near‐infrared region at the −0.3 V, with responsivity of 26.5 and 70.2 mA W−1 for 500 and 740 nm, respectively. But, at the 0.1 V, the PD responds only to the visible region with a photo‐response of 3.7 mA W−1 (500 nm) and maintains a high rejection ratio (R500 nm/R740 nm) of 28.5. This PD also exhibits a fast response speed (rise time: 220 μs, fall time: 240 μs). This work provides a novel strategy to fabricate a cost‐effective multifunctional photodetector for future advanced optoelectronic system.

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